Transcription of Reflective Optical Sensor with Transistor Output
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Reflective Optical Sensor with Transistor Output
Semiconductors Rev. , 30-Jul-121 Document Number: 83751 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Optical Sensor with Transistor OutputDESCRIPTIONThe CNY70 is a Reflective Sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 7 x 6 Peak operating distance: < mm Operating range within > 20 % relative collector current: 0 mm to 5 mm Typical Output current under test: IC = 1 mA Emitter wavelength.
Angular Displacement Fig. 11 - Relative Collector Current vs. Displacement 0.1 1 10 100 0.1 96 11914 I F - Forward Current (mA) CTR - Current Transfer Ratio (%) Kodak neutral card (white side) d = 0.3 mm V CE =5V 1 10 100 0.1 1 10 96 12001 V CE - Collector Emitter Voltage (V) C TR - C urrent Transfer Ratio (%) 20 mA 10 mA 5 mA 2 mA 1 mA I F = 50 mA
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