Transcription of RF Power Amplifier Design - RFsilicon
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RF Power Amplifier Design - RFsilicon
RF Power Amplifier DesignMarkus Mayer & Holger ArthaberDepartment of Electrical Measurements and Circuit DesignVienna University of TechnologyJune 11, 20012 Contents~Basic Amplifier ConceptszClass A, B, C, F,hHCAzLinearity AspectszAmplifier Example~Enhanced Amplifier ConceptszFeedback, Feedforward, ..zPredistortionzLINC, Doherty, EER, ..3 Efficiency Definitions~Drain Efficiency:~ Power Added Efficiency: DCOUTDPP= = =GPPPDDCINOUTPA11 4 Ideal FET Input and Output Characteristics0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0V=VGSPV=0 GSOhmicSaturationBreakdowngmDDKDDVVV = 5 Maximum Output Power Match0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0V=VGSPV=0 GSOhmicSaturationBreakdowngmmKDSOPTIVVR =max6 Class A0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ7 Class A Circuit VDDRLDGS48%dB) 14 ( 50%PA == = ADGG8 Class B0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ9 Class C0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ10 Class B and C Circuit VDDRLDGSf0 Class BClass C%65dB) (8 6dB-%78PA == = ADGG%01%100PA GD11 Influence of Conduction Angle12 Class F ( harmonic controlled Amplifier )0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ13hHCA(halfsinusoida llydriven HCA)0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ14 Class F andhHCA Circuit VDDRLVDSID Ze(n)0, n=eveninf, n=even Zo(n)0, n=1inf, n=oddClass FhHCA%87dB) (9 5dB-0%10PA == = ADGG%96dB)
Q I Q I Q modulator demodulator OPAs main amp. local oscillator RF-output bas eba nd i nput UMTS example: 40 Digital Predistortion ... phase-signal have higher than transmit signal-30 -20 -10 0 10 20 30-60-50-40-30-20-10 0 10 r e l a t i v e pow er / dB relative frequency / MHz Magnitude Phase
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