Transcription of RF Power Amplifiers - MIT OpenCourseWare
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RF Power Amplifiers - MIT OpenCourseWare
The World Leader in High-Performance Signal Processing SolutionsRF IFRF Power AmplifiersMay 7, 20032RF IFOutline PA IntroductionzPower transfer characteristicszIntrinsic PA metricszLinear and Non-linear amplifierszPA Architectures Single-Stage Linear PAzLoad-line theoryzTransistors size zInput and Output MatchingzSo why is this so hard? High-efficiency PAszClass A, AB, B and C amplifiers3RF IFOutline (cont.) Real-World design ExamplezSelecting architecture, number of stageszDesigning stageszTuning: inter-stage match and output System specificationszRuggedness: load mis-match and VSWRzLinearity: spectral mask (ACPR), switching transientszNoise in receive band Power Control4RF IFPA Transfer characteristicsDefining linearity:G01 Pin(dBm)Pout(dBm)Pout= Pin+ Glinearnon-linear (actual)5RF IFPA Transfer characteristicsDefining linearity:Gain (dB)Pin(dBm)Pou
Real-World Design Example GSM 900 MHz, GaAs HBT PA Design P OUT = 33 dBm (linear) = 2 W V CC = 3.5V R LOAD = V CC 2 / 2*P OUT = 3 Ω I MAX = 2*V CC /R LOAD = 2.33 A (Note: expect saturated power to be ~ 35 dBm) Input power: constant-envelope +5 dBm Gain = P OUT –P IN = 27 dB. Expect roughly 10 dB per stage 3 STAGE DESIGN
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