Transcription of RF Power LDMOS Transistor - NXP
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RF Power LDMOS Transistor - NXP
MRFX1K80H1RF Device DataNXP SemiconductorsRF Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETThis high ruggedness device is designed for use in high VSWR industrial,medical, broadcast, aerospace and mobile radio applications. Its unmatchedinput and output design supports frequency use from to 400 PerformanceFrequency(MHz)Signal TypeVDD(V)Pout(W)Gps(dB) D(%)27(1)CW651800 (100 sec, 10% Duty Cycle)651800 108(2,3)CW601600 (100 sec, 10% Duty Cycle)651800 230 Doherty(3)DVB--T (8k OFDM)63250 (4)Pulse(100 sec, 20% Duty Cycle)651800 (12 sec, 10% Duty Cycle)631700 Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult230(4)Pul se(100 sec, 20%Duty Cycle)> 65:1 at allPhase Angles14 Peak(3 dBOverdrive)65No DeviceDegradation1.
11.2 W W/ C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 99 C, 1800 W CW, 65 Vdc, IDQ(A+B) = 150 mA, 98 MHz R JC 0.09 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 65 C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
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