Transcription of RF Power LDMOS Transistor - NXP
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RF Power LDMOS Transistor - NXP
MRFX1K80H1RF Device DataNXP SemiconductorsRF Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETThis high ruggedness device is designed for use in high VSWR industrial, medical , broadcast, aerospace and mobile radio applications. Its unmatchedinput and output design supports frequency use from to 400 PerformanceFrequency(MHz)Signal TypeVDD(V)Pout(W)Gps(dB) D(%)27(1)CW651800 (100 sec, 10% Duty Cycle)651800 108(2,3)CW601600 (100 sec, 10% Duty Cycle)651800 230 Doherty(3)DVB--T (8k OFDM)63250 (4)Pulse(100 sec, 20% Duty Cycle)651800 (12 sec, 10% Duty Cycle)631700 Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult230(4)Pul se(100 sec, 20%Duty Cycle)> 65:1 at allPhase Angles14 Peak(3 dBOverdrive)65No DeviceDegradation1. Measured in 27 MHz reference circuit (page 6).2. Measured in 108 MHz broadband reference circuit (page 11).
Industrial, scientific, medical (ISM) – Laser generation – Plasma generation – Particle accelerators – MRI, RF ablation and skin treatment – Industrial heating, welding and drying systems Radio and VHF TV broadcast Aerospace – HF communications – Radar Document Number: MRFX1K80H Rev. 1, 09/2018 NXP Semiconductors Technical Data
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