Transcription of RF Power LDMOS Transistor - NXP
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RF Power LDMOS Transistor - NXP
MRFX1K80H1RF Device DataNXP SemiconductorsRF Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETThis high ruggedness device is designed for use in high VSWR industrial,medical, broadcast, aerospace and mobile radio applications. Its unmatchedinput and output design supports frequency use from to 400 PerformanceFrequency(MHz)Signal TypeVDD(V)Pout(W)Gps(dB) D(%)27(1)CW651800 (100 sec, 10% Duty Cycle)651800 108(2,3)CW601600 (100 sec, 10% Duty Cycle)651800 230 Doherty(3)DVB--T (8k OFDM)63250 (4)Pulse(100 sec, 20% Duty Cycle)651800 (12 sec, 10% Duty Cycle)631700 Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult230(4)Pul se(100 sec, 20%Duty Cycle)> 65:1 at allPhase Angles14 Peak(3 dBOverdrive)65No DeviceDegradation1. Measured in 27 MHz reference circuit (page 6).2. Measured in 108 MHz broadband reference circuit (page 11).3. The values shown are the center band performance numbers across the indicatedfrequency Measured in 230 MHz production test fixture (page 17).
C102 R109 C110 C109 C107C108 R101 C103C104 U101 T2 Rev. 0 Q2 C19 Temperature Compensation Detail T2 TransformerDetail D101 R105 D94843 C105 C106 Q101 C17 Temperature Compensation D50876 MRFX1K80H MRF1K50H MRFE6VP61K25H R102 Note: Component numbers C3, C4 and C14 are not used.
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