Transcription of RF Power LDMOS Transistor - NXP
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RF Power LDMOS Transistor - NXP
MRFX1K80H1RF Device DataNXP SemiconductorsRF Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETThis high ruggedness device is designed for use in high VSWR industrial,medical, broadcast, aerospace and mobile radio applications. Its unmatchedinput and output design supports frequency use from to 400 PerformanceFrequency(MHz)Signal TypeVDD(V)Pout(W)Gps(dB) D(%)27(1)CW651800 (100 sec, 10% Duty Cycle)651800 108(2,3)CW601600 (100 sec, 10% Duty Cycle)651800 230 Doherty(3)DVB--T (8k OFDM)63250 (4)Pulse(100 sec, 20% Duty Cycle)651800 (12 sec, 10% Duty Cycle)631700 Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult230(4)Pul se(100 sec, 20%Duty Cycle)> 65:1 at allPhase Angles14 Peak(3 dBOverdrive)65No DeviceDegradation1.
C108, C110 1 F Chip Capacitor GRM21BR71H105KA12L Murata C103, C105, C107, C109 1 nF Chip Capacitor C2012X7R2E102M TDK D101 Red LED, 1206 LH N974-KN-1 OSRAM Q101 NPN Bipolar Transistor BC847ALT1G ON Semiconductor R101 2.2 k , 1/8 W Chip Resistor CRCW08052K20JNEA Vishay R102, R109 1.2 k , 1/8 W Chip Resistor CRCW08051K20FKEA …
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