Transcription of RF Power LDMOS Transistors High Ruggedness N--Channel ...
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RF Power LDMOS Transistors High Ruggedness N--Channel ...
MRF300AN MRF300BN1RF Device DataNXP SemiconductorsRF Power LDMOS TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETsThese devices are designed for use in HF and VHF communications,industrial, scientific and medical (ISM) and broadcast and aerospaceapplications. The devices are extremely rugged and exhibit high performanceup to 250 Performance:VDD=50 VdcFrequency(MHz)Signal TypePout(W)Gps(dB) D(%) (1)CW320 (2)330 (3)330 (4)320 (5)325 (6)320 (7)Pulse(100 sec, 20% Duty Cycle)330 Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W) (100 sec, 20%Duty Cycle)> 65:1 at allPhaseAngles2 Peak(3 dBOverdrive)50No DeviceDegradation230 Pulse(100 sec, 20%Duty Cycle)> 65:1 at allPhaseAngles6 Peak(3 dBOverdrive)50No DeviceDegradation1.
Thermal Impedance, Junction to Case Pulse: Case Temperature 74 C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 100 mA, 230 MHz Z JC 0.13 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 2, passes 2500 V Charge Device Model (per JS--002--2014) C3, passes 1200 V Table 4.
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