SiC brochure 2015-v3-web-correctorder4

VOL. MAY SUBSTRATESSILICON carbide (SiC) SUBSTRATESP arameterPolytypeDopantResistivityOrienta tionFWHMR oughness, Ra**Dislocation densityMicropipe densityN-type 4 HNitrogen~ Ohm-cm40 off-axis< 20 arc-sec< 5 ~5 103 cm-2 < cm-2 Semi-insulating 4H, 6 HVanadium> 1 1011 Ohm-cmOn-axis< 25 arc-sec< 5 < 1 104 cm-2 < cm-2 Additional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*)Thermal Conductivity7 KHUPDO ([SDQVLRQ &RHI FLHQW6 SHFL F +HDW 0C)370 (W/mK) at Room (10-6K-1) (J g-1 K-1)Thermal PropertiesThe unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high power and high frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices.]

SILICON CARBIDE (SiC) SUBSTRATES Parameter Polytype Dopant Resistivity Orientation FWHM Roughness, Ra** Dislocation density Micropipe density N-type 4H

Tags:

  Silicon, Silicon carbide, Carbide

Information

Related search queries