Transcription of Simulating the Avalanche Behavior of Trench Power …
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Simulating the Avalanche Behavior of Trench Power mosfets (1), (1), sch (1), (2) and (3). (1). Infineon Technologies Austria AG, Villach, Austria (2). Infineon Technologies AG, Munich, Germany (3). SEMIKRON Elektronik GmbH & Co. KG, Nuremberg, Germany Abstract The Avalanche Behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, the experimentally found dependence on design parameters was also possible to predict qualitatively by means of simulation. Keywords: MOSFET, Trench , Avalanche Ruggedness INTRODUCTION thus making it stable to process tolerances. The drift- region doping can be increased, leading to a clearly reduced on-state resistance even below the so-called The industry's demand for devices with lower on-state silicon limit which is the on-state resistance of an resistance and good switching Behavior continues to ideal abrupt pn-junction at a given breakdown voltage exist.
Simulating the Avalanche Behavior of Trench Power MOSFETs I.Pawel (1), R.Siemieniec (1), M.Rösch (1), F.Hirler (2) and R.Herzer (3) (1) Infineon Technologies Austria AG, Villach, Austria (2) Infineon Technologies AG, Munich, Germany (3) SEMIKRON Elektronik GmbH & Co. KG, Nuremberg, Germany Abstract The avalanche behavior of a new Trench Power …
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Drain current rating and Bonding wire, Power, Drain current rating and Bonding wire limitation, Laminated Bus Bar Solutions, Trench MOSFET Combining SiC, Trench MOSFET Combining SiC Performance With Silicon Ruggedness, MicroBUCK SiC402A/B Integrated Buck, High Voltage MOSFET Technology, Models, and, High Voltage MOSFET Technology, Models, and Applications