Transcription of SRIM Tutorial 1 - Ion Ranges, Doses and Damage
{{id}} {{{paragraph}}}
Page 1 of 6 . Tutorial #1- Introduction to ion ranges , Doses and Damage This Tutorial will cover how to find the energy and dose of ions required to implant atoms into a target at a given depth and concentration. To illustrate this, we will assume that we wish to implant the n-well of a CMOS semiconductor device. The implanted ions should be an n-type dopant (implanted atom) in silicon and have a peak concentration depth (projected range) of about 250 nm (2500 ) below the silicon surface. The peak dopant concentration should be 5x1018 atoms/cm3.
Page 1 of 6 Tutorial #1- Introduction to Ion Ranges, Doses and Damage This Tutorial will cover how to find the energy and dose of ions required to implant atoms into a
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}