Transcription of Sub-threshold MOSFET Operation - MIT OpenCourseWare
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Sub-threshold MOSFET Operation - MIT OpenCourseWare
0 iD K(vGS VT with K (W/ L) - Microelectronic Devices and Circuits Lecture 12 - Sub-threshold MOSFET Operation - Outline Announcement Hour exam two: in 2 weeks, Thursday, Nov. 5, 7:30-9:30 pm ALSO: sign up for an iLab account!! Review MOSFET model: gradual channel approximation (Example: n-MOS) for (vGS VT)/ 0 vDS (cutoff) K(vGS VT)2 /2 for 0 (vGS VT)/ vDS (saturation) vDS/2) vDS for 0 vDS (vGS VT)/ (linear) **Cox , VT= VFB 2 p-Si + [2 Si qNA(|2 p-Si| vBS)]1/2/Cox and = 1 + [( Si qNA/2(|2 p-Si| vBS)]1/2 /Cox (frequently 1) The factor : what it means physically Sub-threshold Operation - qualitative explanation Looking back at Lecture 10 ( Sub-threshold electron charge) Operating an n-channel MOSFET as a lateral npn BJT The Sub-threshold MOSFET gate-controlled lateral BJT Why we care and need to quantify these observations Quantitative Sub-threshold mo)
Sub-threshold operation, V GS < V~ T p-Si B G + v GS < V T n+ D n+ S Ð v DS > 0 v BS + i D A small number of electrons surmount the barrier and diffuse to drain. ~ The electrons diffuse and do not ÒfeelÓ v DS until they get to the edge of the depletion region. No surface channel; diffusion flux from source to drain when v DS > 0 For any v GB ...
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