Transcription of Technical Data RF Power LDMOS Transistor
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Technical Data RF Power LDMOS Transistor
MRFE6VS25LR51RF Device DataFreescale Semiconductor, Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETRF Power Transistor designed for both narrowband and broadband ISM,broadcast and aerospace applications operating at frequencies from to2000 MHz. This device is fabricated using Freescale s enhanced ruggednessplatform and is suitable for use in applications where high VSWRs Performance:VDD=50 VoltsFrequency(MHz)Signal TypePout(W)Gps(dB) D(%)IMD(dBc) (1,3)Two--Tone(10 kHz spacing)25 2 830--512(2,3)Two--Tone(200 kHz spacing)25 3 2512(4)Pulse(100 sec, 20%Duty Cycle)25 512(4) Load Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult30(1)CW>6 5:1at all (3 dBOverdrive)50No DeviceDegradation512(2) (3 dBOverdrive)512(4)Pulse(100 sec, 20%Duty Cycle) Peak(3 dBOverdrive)512(4) (3 dBOverdrive)1. Measured in MHz broadband reference Measured in 30--512 MHz broadband reference The values shown are the minimum measured performance numbers across theindicated frequency Measured in 512 MHz narrowband test Wide Operating Frequency Range Extreme Ruggedness Unmatched, Capable of Very Broadband Operation Integrated Stability Enhancements Low Thermal Resistance Extended ESD Protection Circuit In Tape and Reel.
MRFE6VS25LR5 1 RF Device Data Freescale Semiconductor, Inc. RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET RF power transistor designed for both narrowband and broadband ISM,
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