Transcription of TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, …
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Semiconductor Components Industries, LLC, 2012 May, 2012 Rev. 61 Publication Order Number:TIP35/DTIP35A, tip35b , TIP35C (NPN); tip36a , TIP36B, TIP36C (PNP)Complementary SiliconHigh-Power TransistorsDesigned for general purpose power amplifier and 25 A Collector Current Low Leakage Current ICEO= mA @ 30 and 60 V Excellent DC Gain hFE= 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = min @ IC = A, f = MHz These are Pb Free Devices*MAXIMUM RATINGSR atingSymbolTIP35 ATIP36 ATIP35 BTIP36 BTIP35 CTIP36 CUnitCollector Emitter VoltageVCEO6080100 VdcCollector Base VoltageVCB6080100 VdcEmitter Base Current Continuous Peak (Note 1)IC2540 AdcBase Current Power Dissipation@ TC = 25_CDerate above 25_CPD125WW/_COperating and Storage Junction Temperature RangeTJ, Tstg 65 to +150_CUnclamped Inductive LoadESB90mJTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance,Junction to C/WJunction To Free Air Thermal C/WStresses exceeding Maximum Ratings may damage the device.
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) http://onsemi.com 2 MARKING DIAGRAMS AYWWG TIP3xx TIP3xx AYWWG 1 BASE 2 COLLECTOR 3 EMITTER TIP3xx = Device Code
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