Transcription of Transient Overvoltage Protection - ON …
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Semiconductor Components Industries, LLC, 2008 April, 2008 - Rev. 01 Publication Order Number:TND335/DTND335/DRev. 0, APR - 2008 Transient Overvoltage Protection Page 1 of 40 | TND335 | Chapter 1. The Nature of the Transient Overvoltage Problem Overview of Hazards Electrical transients in the form of voltage surges have always existed in electrical distribution systems, and prior to the implementation of semiconductor devices, they were of minor concern. The vulnerability of semiconductors to lightning strikes was first studied by Bell Laboratories in 1961. [1] A later report tried to quantify the amount of energy certain semiconductors could absorb before they suffered latent or catastrophic damage from electrostatic discharge. [2] Despite these early warnings, industry did not begin to address the issue satisfactorily until the late 1970s. All electrical and electronic devices can be damaged by voltage transients. The difference between them is the amount of energy they can absorb before damage occurs.
Page 2 of 40 | TND335 | www.onsemi.com The rise time of these strokes has been measured to be around 200 nanoseconds or faster. It is easy to see that the combination of 20,000 Amps and 200 nanoseconds calculates to
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Transient Voltage Suppression, Transient Voltage Suppression diode, Transient, 23 TRANSIENT VOLTAGE SURGE, 23 TRANSIENT VOLTAGE SURGE SUPPRESSORS, SELECTION OF TRANSIENT ANALYSIS SOFTWARE, SELECTION OF TRANSIENT ANALYSIS SOFTWARE FOR PIPELINE, HIGH FREQUENCY TRANSIENT SURGE, Understanding the Terms and Definitions, ZNR Transient/Surge Absorbers D, Inverse FFT for Filtering, Transient