Transcription of Transient Overvoltage Protection - ON …
{{id}} {{{paragraph}}}
Semiconductor Components Industries, LLC, 2008 April, 2008 - Rev. 01 Publication Order Number:TND335/DTND335/DRev. 0, APR - 2008 Transient Overvoltage Protection Page 1 of 40 | TND335 | Chapter 1. The Nature of the Transient Overvoltage Problem Overview of Hazards Electrical transients in the form of voltage surges have always existed in electrical distribution systems, and prior to the implementation of semiconductor devices, they were of minor concern. The vulnerability of semiconductors to lightning strikes was first studied by Bell Laboratories in 1961. [1] A later report tried to quantify the amount of energy certain semiconductors could absorb before they suffered latent or catastrophic damage from electrostatic discharge. [2] Despite these early warnings, industry did not begin to address the issue satisfactorily until the late 1970s.
Page 2 of 40 | TND335 | www.onsemi.com The rise time of these strokes has been measured to be around 200 nanoseconds or faster. It is easy to see that the combination of 20,000 Amps and 200 nanoseconds calculates to
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}