Transcription of Understandillg hydrogen silsesquioxane-based …
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DEPOSITION Understandillg hydrogen silsesquioxane - based dielectric film processing Mark J. Loboda, George A. Toskey, Dow Coming Corp., Midland, Michigan hydrogen silsesquioxane (HSQ) resin has demonstrated unique performance as a precursor for the formation of interlayer dielectrics (ILDs) used in manufacturing ICs with multilevel metallization schemes. Commercially available HSQ- based films routinely provide dielectric constants lower than PECVD silicon dioxide films in submicron devices, with high degrees of planarization. Understanding HSQ film properties is key to successful integration of this material into current and future wafer processing lines. Fo r planarized ILD applications, engineers at several IC man ufacturers have reported on spin-coating solu tio n s of HSQ resin as a proven production technology.
DEPOSITION Understandillg hydrogen silsesquioxane-based dielectric film processing Mark J. Loboda, George A. Toskey, Dow Coming Corp., Midland, Michigan
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