Transcription of Understanding DRAM Operation
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Understanding DRAM Operation
Applications NoteUnderstanding DRAM Operation12/96 Page 1 OverviewDynamic Random Access Memory (DRAM) devicesare used in a wide range of electronics they are produced in many sizes and soldin a variety of packages, their overall Operation isessentially the are designed for the sole purpose of storingdata. The only valid operations on a memory deviceare reading the data stored in the device, writing (orstoring) data in the device, and refreshing the dataperiodically. To improve efficiency and speed, anumber of methods for reading and writing the mem-ory have been document describes basic asynchronousDRAM Operation , including some of the most com-monly used features for improving DRAM perfor-mance. While many aspects of a synchronousDRAM are similar to an asynchronous DRAM, syn-chronous Operation differs because it uses a clockedinterface and multiple bank architecture.
after CAS goes low. 4. WE must be set high for a read operation to occur prior (tRCS) to the transition of CAS, and remain high (tRCH) after the transition of CAS. 5. CAS must switch from high to low and remain low (tCAS). 6. OE goes low within the prescribed window of time. Cycling OE is optional; it may be tied low, if desired. 7.
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