Transcription of VLSI FABRICATION TECHNOLOGY
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APPENDIX A. vlsi FABRICATION TECHNOLOGY . Introduction Since the first edition of this text, we have witnessed a fantastic evolution in vlsi . (very-large-scale integrated circuits) TECHNOLOGY . In the late 1970s, non-self-aligned metal gate MOSFETs with gate lengths in the order of 10 m were the norm. Current vlsi FABRICATION TECHNOLOGY is already at the physical scaling limit with gate lengths in the 20-nm regime. This represents a reduction in device size of almost 1000x, along with an even more impressive increase in the number of devices per vlsi chip.
This appendix will consider only silicon-based (Si) technologies. Although other compound materials in groups III through V, such as gallium arsenide (GaAs) and aluminum gallium nitride (AlGaN), are also used to implement VLSI chips, silicon is still the most popular material, with excellent cost–performance trade-off. Recent development in SiGe
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