Transcription of VLSI FABRICATION TECHNOLOGY
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APPENDIX A. vlsi FABRICATION TECHNOLOGY . Introduction Since the first edition of this text, we have witnessed a fantastic evolution in vlsi . (very-large-scale integrated circuits) TECHNOLOGY . In the late 1970s, non-self-aligned metal gate MOSFETs with gate lengths in the order of 10 m were the norm. Current vlsi FABRICATION TECHNOLOGY is already at the physical scaling limit with gate lengths in the 20-nm regime. This represents a reduction in device size of almost 1000x, along with an even more impressive increase in the number of devices per vlsi chip. Future development in vlsi TECHNOLOGY must rely on new device concepts and new materials, taking quantum effects into account.
Brief explanations of standard VLSI processing steps are given. The variety of devices available in CMOS and BiCMOS fabrication technologies are also presented. In particular, the availability of components in the IC (integrated circuit) environment that are distinct from discrete circuit design will be discussed.
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