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disadvantage of ion-implantation over diffusion doping ? (a) It is a low temperature process (b) Point imperfections are not pro- duced (c) Shallow doping is possible (d) Gettering is possible Which one of the following is correct in n-p-n transistor ? (a) (b) (c) (d) Collector and emitter terminals can be exchanged Collector is heavily doped, base
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