RF Power Amplifiers - MIT OpenCourseWare
Real-World Design Example GSM 900 MHz, GaAs HBT PA Design P OUT = 33 dBm (linear) = 2 W V CC = 3.5V R LOAD = V CC 2 / 2*P OUT = 3 Ω I MAX = 2*V CC /R LOAD = 2.33 A (Note: expect saturated power to be ~ 35 dBm) Input power: constant-envelope +5 dBm Gain = P OUT –P IN = 27 dB. Expect roughly 10 dB per stage 3 STAGE DESIGN
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