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Sub-threshold MOSFET Operation - MIT OpenCourseWare
Sub-threshold operation, V GS < V~ T p-Si B G + v GS < V T n+ D n+ S Ð v DS > 0 v BS + i D A small number of electrons surmount the barrier and diffuse to drain. ~ The electrons diffuse and do not ÒfeelÓ v DS until they get to the edge of the depletion region. No surface channel; diffusion flux from source to drain when v DS > 0 For any v GB ...
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