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Wet Etching - UWEE

Wet Etching - UWEE

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• Example: For 10:1 BOE etching a Si wafer surface that contains SiO 2, aluminum metalization, and Si 3 N 4 spacers: – 10:1 BOE SEL for SiO 2 / aluminum = ~ 15:1 – 10:1 BOE SEL for SiO 2 / Si 3 N 4 = ~100:1 – 10:1 BOE SEL for SiO 2 / Si substrate = > 10,000 : 1 • Selectivity is usually dependent upon etch formulation, concentration,

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