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Channel Enhancement Mode Power
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DMG2305UX - Diodes Incorporated
www.diodes.comP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS R DS(ON) Max Package I D Max T A = +25°C -20V 52mΩ @V GS = -4.5V SOT23 -5.0A 100mΩ @V GS-= -2.5V 3.6A Description This MOSFET is designed to minimize the on-state resistance (R DS(ON)), yet maintain superior switching performance, making it
Features Mechanical Data
www.diodes.comN-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 …