1. はじめに 【背景】 - fbi-award.jp

1 3 1. [1] Si GaAs ZnO [2] 1 2 GaAs/AlGaAs III-V 2: 1.

2 3 poly(3,4-ethylenedioxythiophene):poly(st yrenesulfonate) (PEDOT:PSS) PEDOT:PSS PEDOT PSS 4 500 S/cm ZnO 3: PEDOT:PSS 4: ZnO/PEDOT:PSS PEDOT:PSS ZnO 2.

3 Si n [2] PEDOT:PSS n ZnO 5 n ZnO PEDOT:PSS Au - PEDOT:PSS Au ZnO Au Pt Pd [3] PEDOT:PSS ~ 1010 [4] 5: - : ZnO/Au : ZnO/PEDOT:PSS/Au n= b= eV~ 1010T= 300 K - n 1 Mott-Schottky ZnO PEDOT.

4 PSS ZnO/PEDOT:PSS 3. [2,5] PEDOT:PSS ZnO PEDOT:PSS 250 nm 6 PEDOT:PSS 250 nm 100 % PEDOT.

5 PSS ZnO ZnO Mg Eg eV 375 nm eV 275 nm [6] Mg MgxZn1-xO 6: PEDOT:PSS MBE ZnO Mg MgxZn1-xO PEDOT:PSS Au 7 Au 10-3 cm2 10-3 cm2 ZnO 2 105 cm-1 50 nm > 100 nm MgxZn1-xO MgxZn1-xO - 8 ISC VOC ISC VOC ISC ISC

6 ISC 1 ISC 500 m MgZnO/PEDOT:PSS MgZnO/PEDOT:PSS/Au 7: : : 8: : V = 0 V : I = 0 V qhPAI = optSC|| (1) Aopt P h q 9 Mg MgxZn1-xO Mg Eg 103 Eg Mg 100% Si pin Mg MgxZn1-xO/PEDOT:PSS [7,8] 4.

7 MgxZn1-xO ZnO ZnO 10,000cm2/Vs [9,10] PEDOT:PSS MgxZn1-xO/ZnO MBE MgxZn1-xO/ZnO x ~ d = 100 ~ 300 nm 9:MgxZn1-xO/PEDOT:PSS x= 0 V= 0 V SipinPD PEDOT:PSS Au Ar PEDOT:PSS/Au Ti/Au MgxZn1-xO/ZnO 10 60 m 250 m xx xy VG 10-4 cm2 11 xx C VG VG xx C VG C MgxZn1-xO/ZnO PEDOT:PSS 10: : : T= 2 K 2 K h/e2h/e2VG= 50 mV VG= -70 mV 10 K 20 K 11: xx VG 12.

8 Xx xx xx 11 xx VG h/e2 [11] xx ~ h/e2 12 VG xx 11 h/e2 PEDOT:PSS VG 13 VG xx 13 VG xy VG xx xy VG PEDOT:PSS PEDOT:PSS 13: 5.

9 PEDOT:PSS ZnO MgxZn1-xO MgxZn1-xO/ZnO [1] H. Kroemer, Rev. Mod. Phys. 73, 783 (2001). [2] S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981). [3] . zg r, Y. I. Alivov, C. Liu, A. Teke, M.

10 A. Reshchikov, S. Do an, V. Avrutin, S. J. Cho, and H. Morko , J. Appl. Phys. 98, 041301 (2005). [4] M. Nakano, A. Tsukazaki, R. Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, and M. Kawasaki, Appl. Phys. Lett. 91, 142113 (2007). [5] B. L. Sharma, Metal-Semiconductor Schottky Barrier Junctions and Their Applications (Plenum Press, New York, 1984). [6] A. Ohtomo and A. Tsukazaki, Semicond. Sci. Technol. 20, S1 (2005). [7] M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, and M. Kawasaki, Appl. Phys. Lett. 93, 123309 (2008). [8] M. Nakano, T. Makino, A. Tsukazaki, K.