Transcription of 集積デバイス工学（1） - ritsumei.ac.jp
1 11 2 100 30 130 94 zA 95 14 zA 80 20 zB 70 20 zC 55 24 zF 55 48 106 F 28 z 45 F z 35 C 3 LSI zVTCMOS MTCMOS zSOI High-k low-k LSI II 4 A B CMOS VLSI 5 LSI CMOSLSI LSI MOS MOS SPICE CMOS DC CMOS CMOS 6 SiSiSiSiSiSiSiSiSiSiSiSi 1016/m3 27 Eg Si Ei n p 2 VCiEEE+= Eg( ) EcEvEi( )][ ==mnpni2inpn= 8 (a) (As )(b) p (B )As SiSiSiSiSiSiSiSi B SiSiSiSiSiSiSiSi (As,P) ( ) (B) ( )
2 9 P B III N As V - ( ) + ( ) z z z z 2inpn= DNn DiiNnnnp22 = +=iDBiFnNTkEElnANp AiiNnpnn22 = =iABiFnNTkEEln11 (mobility) z v z [m2/V s]z Ev = 12 =HWLRW: L: H: R [ cm] [ m] [ -1 m-1] =SLRHWL V IS W H 1=313 z p pz n N n>>p P n<<p )(11npnpq + ==(3 33)nDnNqnq = ==111pApNqpq = ==111(3 34)(3 35)
3 14 1022[m-3] 15PN P N Vbi ( q VbiEF EN P Ei 16 P N iABnNTkln iDBnNTkln = iDBinFnNTkEEln = iABFipnNTkEEln = + = = 2lnlnlniDABiDBiABinipbinNNTknNTknNTkEEVq =2lniDABbinNNqTkVABF ipipNTkEEnp= =expDBinFinNTkEEnn= =expN P qVbiEFEipEin 17 MOS (Tr) NMOS PMOS zN+,P+ N,P zMOS MOSFET(Field Effect Transistor) poly-SiOxideN+N+PNMOS PMOS poly-SiOxideP+P+N 18 MOS Cox oxoxoxtC =poly-SiOxideN+N+P L =ox[] Cg oxgCWLC oxt tox419 0V 20 MOS (VDS) (IDS)Vth< VGS( )VDS<VGS-VthVDS=VGS-VthVDS>VGS-VthVDS VGS 21 MOS VDS<VGS Vth VGS-Vth<VDS (VDS) (IDS)Vth< VGS( )VDS<VGS-VthVDS=VGS-VthVDS>VGS-VthVDS VGS 22N MOS VDS=VGS Vth (IDS) ()())
4 = =222121 DSDSthGSnDSDSthGSoxnDSVVVVVVVVCLWI ()[]22thGSnDSVVI = VDS=VGS Vth (VDS) VDS=VG Vth VDS
