Transcription of 2章半导体中杂质和缺陷 - Nankai University
1 2 ( ) ( ) 103cm-2 105 1 B 103 1 2 III V (Li+) 2 2 ND V (P+), ( ) n V n Si Ge V Si Ge ED ED ( NA)
2 EA p Si Ge III Si In Ge EA 3 3 III V V 4 401220mqE, E08h = =42022208nmqZEhn = n=1,2, = = n=1 = 0 r 22024*8hqmErnD = 200*22024*8rprpAEmmhqmE == ( )( )2204008hqmE =200*rnDEmmE = 1 2 Si: r=12, ED= */m0 *= m0 ED= : r=16, ED= */m0 *= m0 ED= eV. ND( )>>NA ( ) n( )= ND-NA ND n ND<<NA p ( )= NA-ND NA p p n ND>NA, ND-NA ND NA 1 2 Si Ge III V 2-9 3 4 I ( ) Au Si Ge EA3>EA2>EA1 Ge ED EA3 EA2 EA1 1.
3 , (a). (b). 3. ( ) AB A B AB, B A BA 2. ( ) GaAs M,X AB AB BA [B ]
