2N1595 THRU 2N1599 - BEN

1 COMSET SEMICONDUCTORS1/22N1595 thru 2N1599 SILICON THYRISTORI ndustrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit handling capability of amperes at junction temperetures to 125 CMAXIMUM RATINGS (*)TJ=125 C unless otherwise notedSymbolRatings2N1595 2N1596 2N1597 2N1598 2N1599 VRSM(REP)Peak reverse blocking voltage *50100200300400 VIT(RMS)Forward Current RMS (all conductionangles) Surge Current(One Cycle, 60Hz, TJ=-65 to +125 C)15 AmpPGMPeak Gate Power (AV)Average Gate Power - Gate Current Gate Voltage - Forward10 VVGRMPeak Gate Voltage - Reverse10 VTJ Operating Junction TemperatureRange-65 to +125 TSTGS torage Temperature Range-65 to +150 CELECTRICAL CHARACTERISTICSTJ=25 C unless otherwise noted, RGK=1000 SymbolRatings2N1595 2N1596 2N1597 2N1598 2N1599 VDRMPeak Forward BlockingVoltage *Min :50100200300400 VIRRMPeak Reverse Blocking Current(Rated VDRM, TJ =125 C)Max.

2 SEMICONDUCTORS2/22N1595 thru 2N1599 SymbolRatings2N1595 2N1596 2N1597 2N1598 2N1599 IDRMPeak Forward Blocking Current(Rated VDRM with gate open , TJ=125 C)Max Trigger Current (2)Anode Voltage= Vdc, RL=12 Typ : : 10mAGate Trigger VoltageAnode Voltage= Vdc, RL=12 Typ : : = Rated, RL=100 , TJ=125 CMin : CurrentAnode Voltage= Vdc, gate openTyp : On VoltageIT=1 AdcTyp : : Time (td+tr)IGT=10 mA, IT=1 ATyp : stqTurn-Off TimeIT=1 A, IR =1 A, dv/dt=20 V/ s,TJ=125 CVDRM = Rated VoltageTyp : 10 s* VDRM or VRSM can be applied for all types on a continuous dc basis without incurring DATA CASE TO-39 DIMENSIONSmm inchesA6,250,24B13,590,53C9,240,36D8,240 ,32E0,780,03F1,05 0,041G0,42 0,165H45 L5,10,2 Pin 1 :CathodePin 2 :GatePin 3 :AnodeInformation furnished is believed to be accurate and reliable.

3 However, CS assumes no responsabilityfor the consequences of use of such information nor for errors that could are subject to change without notice.