2N3055 (NPN), MJ2955 (PNP) - ON Semiconductor

1 Semiconductor Components Industries, LLC, 2005 December, 2005 Rev. 61 Publication Order Number: 2N3055 /D2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral purpose switching and amplifier DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage VCE(sat) = Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO60 VdcCollector Emitter VoltageVCER70 VdcCollector Base VoltageVCB100 VdcEmitter Base VoltageVEB7 VdcCollector Current ContinuousIC15 AdcBase CurrentIB7 AdcTotal Power Dissipation @ TC = 25 CDerate Above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 65 to +200 CMaximum ratings are those values beyond which device damage can ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously.

2 If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be 1. Power DeratingTC, CASE TEMPERATURE ( C)PD, POWER DISSIPATION (WATTS)14012010080604020*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, AMPEREPOWER TRANSISTORSCOMPLEMENTARY SILICON60 VOLTS, 115 devices are recommended choices for future useand best overall INFORMATION2N3055TO 204AA100 Units / TrayMJ2955 GTO 204AA(Pb Free)TO 204AA (TO 3)CASE 1 07 STYLE 1100 Units / Tray2N3055 GTO 204AA(Pb Free)100 Units / TrayMJ2955TO 204AA100 Units / TrayMARKING DIAGRAM xxxx55= Device Codexxxx = 2N30 or MJ20G= Pb Free PackageA= Location CodeYY= YearWW= Work WeekMEX= Country of Orginxxxx55 GAYYWWMEX2N3055(NPN), MJ2955 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max UnitOFF CHARACTERISTICS*Collector Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0)VCEO(sus)60 VdcCollector Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)VCER(sus)70 Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

3 ICEO mAdc Collector Cutoff Current(VCE = 100 Vdc, VBE(off) = Vdc)(VCE = 100 Vdc, VBE(off) = Vdc, TC = 150 C) ICEX mAdc Emitter Cutoff Current (VBE = Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS* (Note 1)DC Current Gain(IC = Adc, VCE = Vdc)(IC = 10 Adc, VCE = Vdc) Collector Emitter Saturation Voltage(IC = Adc, IB = 400 mAdc)(IC = 10 Adc, IB = Adc)VCE(sat) Emitter On Voltage (IC = Adc, VCE = Vdc)VBE(on) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased(VCE = 40 Vdc, t = s, Nonrepetitive) Is/b Adc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = Adc, VCE = 10 Vdc, f = MHz) fT MHz *Small Signal Current Gain (IC = Adc, VCE = Vdc, f = kHz) hfe 15 120 *Small Signal Current Gain Cutoff Frequency (VCE = Vdc, IC = Adc, f = kHz)

4 Fhfe 10 kHz*Indicates Within JEDEC Registration. ( 2N3055 )1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2. Active Region Safe Operating AreaVCE, COLLECTOR EMITTER VOLTAGE (VOLTS) , COLLECTOR CURRENT (AMP)dc500 ms1 ms250 ms50 msBONDING WIRE LIMITTHERMALLY LIMITED @ TC = 25 C (SINGLE PULSE)SECOND BREAKDOWN LIMITT here are two limitations on the power handling ability ofa transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation; , the transistor must not be subjected to greaterdissipation than the curves data of Figure 2 is based on TC = 25 C; TJ(pk) isvariable depending on power level. Second breakdownpulse limits are valid for duty cycles to 10% but must bederated for temperature according to Figure (NPN), MJ2955 (PNP) , COLLECTOR EMITTER VOLTAGE (VOLTS)VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 3.

5 DC Current Gain, 2N3055 (NPN)IC, COLLECTOR CURRENT (AMP) , DC CURRENT GAINTJ = 150 C25 C 55 CVCE = , COLLECTOR CURRENT (AMP) , DC CURRENT GAINTJ = 150 C25 C 55 CVCE = 4. DC Current Gain, MJ2955 (PNP) , BASE CURRENT (mA)01020501002005001000 = ATJ = 25 , BASE CURRENT (mA) , COLLECTOR CURRENT (AMPERES) = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10V, VOLTAGE (VOLTS)Figure 5. Collector Saturation Region, 2N3055 (NPN) @ VCE = , COLLECTOR CURRENT (AMP) = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10V, VOLTAGE (VOLTS) @ VCE = 20005000IC = ATJ = 25 AFigure 6. Collector Saturation Region, MJ2955 (PNP)Figure 7. On Voltages, 2N3055 (NPN)Figure 8. On Voltages, MJ2955 (PNP)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONS Semiconductor Components Industries, LLC, 2000 January, 2000 Rev. 07Z1 Case Outline Number:1 SCALE 1:1 CASE 1 07 ISSUE ZDATE 05/18/1988TO 204 (TO 3)NOTES:1.

6 DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: ALL RULES AND NOTES ASSOCIATED WITHREFERENCED TO-204AA OUTLINE SHALL 1:PIN 1. BASE2. EMITTERCASE: COLLECTORSTYLE 2:PIN 1. BASE2. COLLECTORCASE: EMITTERSTYLE 3:PIN 1. GATE2. SOURCECASE: DRAINSTYLE 4:PIN 1. GROUND2. INPUTCASE: OUTPUTSTYLE 5:PIN 1. CATHODE2. EXTERNAL TRIP/DELAYCASE: ANODESTYLE 6:PIN 1. GATE2. EMITTERCASE: COLLECTORSTYLE 7:PIN 1. ANODE2. OPENCASE: CATHODESTYLE 8:PIN 1. CATHODE #12. CATHODE #2 CASE: ANODESTYLE 9:PIN 1. ANODE #12. ANODE #2 CASE: T SEATINGPLANE2 ( ) ( )T Q Y 21 ULGBVHON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages.

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