2N3904 MMBT3904 PZT3904 - NPN General-Purpose Amplifier

1 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. October 20142N3904 / MMBT3904 / PZT3904 NPN General-Purpose AmplifierOrdering InformationPart NumberMarkingPackagePacking MethodPack Quantity2N3904BU2N3904TO-92 3 LBulk100002N3904TA2N3904TO-92 3 LAmmo20002N3904 TAR2N3904TO-92 3 LAmmo20002N3904TF2N3904TO-92 3 LTape and Reel20002N3904 TFR2N3904TO-92 3 LTape and Reel2000 MMBT39041 ASOT-23 3 LTape and Reel3000 PZT39043904 SOT-223 4 LTape and Reel25002N3904 MMBT3904 PZT3904 EBCTO-92 SOT-23 SOT-223 Mark:1 ACBEEBCCD escriptionThis device is designed as a General-Purpose amplifierand switch.

2 The useful dynamic range extends to 100mA as a switch and to 100 MHz as an / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. Absolute Maximum Ratings(1), (2)Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only.

3 Values are at TA = 25 C unless otherwise :1. These ratings are based on a maximum junction temperature of 150 These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle CharacteristicsValues are at TA = 25 C unless otherwise :3. Device is mounted on FR-4 PCB inch X inch X Device is mounted on FR-4 PCB 36 mm X 18 mm X mm, mounting pad for the collector lead minimum 6 Voltage 40 VVCBOC ollector-Base Voltage 60 VVEBOE mitter-Base Current - Continuous200mATJ, TSTGO perating and Storage Junction Temperature Range-55 to 150 CSymbolParameterMaximumUnit2N3904 MMBT3904 (3) PZT3904 (4)

4 PDTotal Device Dissipation6253501,000mWDerate Above 25 CR JCThermal Resistance, Junction to C/WR JAThermal Resistance, Junction to Ambient200357125 C/W2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. Electrical CharacteristicsValues are at TA = 25 C unless otherwise :5. Pulse test: pulse width 300 s, duty cycle CHARACTERISTICSV(BR)CEOC ollector-Emitter Breakdown Voltage IC = mA, IB = 040VV(BR)CBOC ollector-Base Breakdown VoltageIC = 10 A, IE = 060VV(BR)EBOE mitter-Base Breakdown VoltageIE = 10 A, IC = Cut-Off CurrentVCE = 30 V, VEB = 3 V50nAICEXC ollector Cut-Off CurrentVCE = 30 V, VEB = 3 V50nAON CHARACTERISTICS(5)hFEDC Current GainIC = mA, VCE = V40IC = mA, VCE = V70IC = 10 mA, VCE = V100300IC = 50 mA, VCE = V60IC =100 mA, VCE = 30 VCE(sat)Collector-Emitter Saturation VoltageIC = 10 mA, IB = = 50 mA, IB = (sat)

5 Base-Emitter Saturation VoltageIC = 10 mA, IB = = 50 mA, IB = SIGNAL CHARACTERISTICSfTCurrent Gain - Bandwidth ProductIC = 10 mA, VCE = 20 V, f = 100 MHz300 MHzCoboOutput CapacitanceVCB = V, IE = 0, f = 100 CapacitanceVEB = V, IC = 0, f = 100 FigureIC = 100 A, VCE = V, RS = k ,f = 10 Hz to CHARACTERISTICStdDelay TimeVCC = V, VBE = VIC = 10 mA, IB1 = mA35nstrRise Time35nstsStorage TimeVCC = V, IC = 10 mA, IB1 = IB2 = mA200nstfFall Time50ns2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. Typical Performance CharacteristicsFigure 1.

6 Typical Pulsed Current Gain vs. Collector CurrentFigure 2. Collector-Emitter Saturation Voltage vs. Collector CurrentFigure 3. Base-Emitter Saturation Voltage vs. Collector CurrentFigure 4. Base-Emitter On Voltage vs. Collector CurrentFigure 5. Collector Cut-Off Current vs. Ambient TemperatureFigure 6. Capacitance vs. Reverse Bias - COLLECTOR CURRENT (mA)h - TYP ICAL PULSED CURRE NT GAINFE- 40 C25 CCV = 5 VCE 125 - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CESAT25 CC = 10125 C- 40 - COLLECTOR CURRENT (mA)V - BASE-EMITTER VOLTAGE (V)BESATC = 1025 C125 C- 40 - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)BE(ON)CV = 5 VCE 25 C125 C- 40 - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)AV = 30 VCBCBO BIAS VOLTAGE (V)CAPACITANCE (pF)

7 CoboC ibof = MHz2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. Typical Performance Characteristics (Continued)Figure 7. Noise Figure vs. FrequencyFigure 8. Noise Figure vs. Source ResistanceFigure 9. Current Gain and Phase Angle vs. FrequencyFigure 10. Power Dissipation vs. Ambient TemperatureFigure 11. Turn-On Time vs. Collector CurrentFigure 12. Rise Time vs. Collector - FREQUENCY (kHz)NF - NOISE FIGURE (dB)V = = 100 A, R = 500 CSI = mA R = 200 CSI = 50 A R = k CSI = mA R = 200 CSk - SOURCE RESISTANCE ( )NF - NOISE FIGURE (dB)I = 100 ACI = mACSI = 50 ACI = mAC - DEGREES040608010012014016020180110100100 005101520253035404550f - FREQUENCY (MHz)h - CURRENT GAIN (dB) V = 40 VCEI = 10 ( C)P - POWER DISSIPATION (W)DoSOT-223 SOT-23TO-92110100510100500I - COLLECTOR CURRENT (mA)TIME (nS)I = I = @V = 0 VCBdt @V = - COLLECTOR CURRENT (mA)

8 T - RISE TIME (ns)I = I = B1CB2Ic10T = 125 CT = 25 CJV = 40 VCCrJ2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. Typical Performance Characteristics (Continued)Figure 13. Storage Time vs. Collector CurrentFigure 14. Fall Time vs. Collector CurrentFigure 15. Current GainFigure 16. Output AdmittanceFigure 17. Input ImpedanceFigure 18. Voltage Feedback Ratio110100510100500I - COLLECTOR CURRENT (mA)t - STORAGE TIME (ns)I = I = B1CB2Ic10ST = 125 CT = 25 CJJ110100510100500I - COLLECTOR CURRENT (mA)t - FALL TIME (ns)I = I = B1CB2Ic10V = 40 VCCfT = 125 CT = 25 - COLLECTOR CURRENT (mA)h - CURRENT GAINV = 10 VCE Cfe f = kHzT = 25 CA - COLLECTOR CURRENT (mA)h - OUTPUT ADMITTANCE ( mhos)V = 10 VCE Coe f = kHzT = 25 CA o - COLLECTOR CURRENT (mA)h - INPUT IMPEDANCE (k )V = 10 VCE Cie f = kHzT = 25 CA o - COLLECTOR CURRENT ( mA)

9 H - VOLTAGE FEEDBA CK R ATIO (x10 )V = 10 VCE Cre f = kHzT = 25 CA o_42N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier 2002 Fairchild Semiconductor Corporation / MMBT3904 / PZT3904 Rev. Test Circuits10 K V275 t1C1 <<<<< pFDuty Cycle ===== 2%Duty Cycle ===== 2%<<<<< ns - V 300 V10 < < < < < t1 <<<<< 500 s V - V<<<<< ns0010 K V275 C1 <<<<< pF1N916 Figure 19. Delay and Rise Time Equivalent Test CircuitFigure 20. Storage and Fall Time Equivalent Test CircuitAPPROVED July-14-2008 Fairchild Semiconductor Corporation TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

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