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2N3904S - KEC Homepage

2003. 2. 251/4 SEMICONDUCTORTECHNICAL DATA2N3904 SEPITAXIAL PLANAR NPN TRANSISTORR evision No : 3 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESLow Leakage Current: ICEX=50nA(Max.), IBL=50nA(Max.)@VCE=30V, VEB= DC Current Gain Saturation Voltage : VCE(sat)= (Max.) @IC=50mA, IB= collector Output Capacitance: Cob=4pF(Max.) to RATING (Ta=25)DIMMILLIMETERS1. EMITTER2. BASE3. + + + + ~ + MAXLLPPP7+_CHARACTERISTICSYMBOLRATINGUNI TC ollector-Base VoltageVCBO60 VCollector-Emitter VoltageVCEO40 VEmitter-Base VoltageVEBO6 VCollector Current IC200mABase CurrentIB50mACollector Power DissipationPC *350mWJunction TemperatureTj150 Storage Temperature RangeTstg-55150* PC : Package Mounted On Alumina )Type NameMarkingLot 2.

2003. 2. 25 3/4 2n3904s revision no : 3 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v)be i - vc be

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Transcription of 2N3904S - KEC Homepage

1 2003. 2. 251/4 SEMICONDUCTORTECHNICAL DATA2N3904 SEPITAXIAL PLANAR NPN TRANSISTORR evision No : 3 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESLow Leakage Current: ICEX=50nA(Max.), IBL=50nA(Max.)@VCE=30V, VEB= DC Current Gain Saturation Voltage : VCE(sat)= (Max.) @IC=50mA, IB= collector Output Capacitance: Cob=4pF(Max.) to RATING (Ta=25)DIMMILLIMETERS1. EMITTER2. BASE3. + + + + ~ + MAXLLPPP7+_CHARACTERISTICSYMBOLRATINGUNI TC ollector-Base VoltageVCBO60 VCollector-Emitter VoltageVCEO40 VEmitter-Base VoltageVEBO6 VCollector Current IC200mABase CurrentIB50mACollector Power DissipationPC *350mWJunction TemperatureTj150 Storage Temperature RangeTstg-55150* PC : Package Mounted On Alumina )Type NameMarkingLot 2.

2 252/4 Revision No : 3 ELECTRICAL CHARACTERISTICS (Ta=25)CHARACTERISTICSYMBOLTEST CONDITIONMIN. Cut-off CurrentICEXVCE=30V, VEB=3V--50nABase Cut-off CurrentIBLVCE=30V, VEB=3V--50nACollector-Base Breakdown VoltageV(BR)CBOIC=10A, IE=060--VCollector-Emitter Breakdown Voltage *V(BR)CEOIC=1mA, IB=040--VEmitter-Base Breakdown VoltageV(BR)EBOIE=10A, IC= Current Gain *hFE(1)VCE=1V, IC= (2)VCE=1V, IC=1mA70--hFE(3)VCE=1V, IC=10mA100-300hFE(4)VCE=1V, IC=50mA60--hFE(5)VCE=1V, IC=100mA30-- collector -Emitter Saturation Voltage *VCE(sat)1IC=10mA, IB= (sat)2IC=50mA, IB= Saturation Voltage *VBE(sat)1IC=10mA, IB= (sat)

3 2IC=50mA, IB= FrequencyfTVCE=20V, IC=10mA, f=100 MHz300--MHzCollector Output Capacitance CobVCB=5V, IE=0, f= CapacitanceCibVBE= , IC=0, f= ImpedancehieVCE=10V, IC=1mA, f= Feedback Current Gainhfe100-400 collector Output FigureNFVCE=5V, IC= Rg=1k,f= TimeDelay TimetdVoutTotal< 4pFC10k 275 V = ,t < 1ns, Du=2%rinVf--35nSRise Timetr--35 Storage Timetstg20 s1N916or < 4pFCV = 10k Vin0t ,t < 1ns, Du=2%rf--200 Fall Timetf--502N3904S* Pulse Test : Pulse Width300S, Duty Cycle2%.2003. 2. 253/42N3904 SRevision No : 3C0 collector CURRENT I (mA) collector CURRENT I (mA)0C0 BASE-EMITTER VOLTAGE V (V)BEBECI - V10DC CURRENT GAIN CURRENT I (mA)C0 collector -EMITTER VOLTAGE V (V)CECECI - Vh - ICCOLLECTOR CURRENT I (mA) collector -EMITTER SATURATIONCE(sat)V - IBASE-EMITTER SATURATIONCOLLECTOR CURRENT I (mA)CBE(sat)V - I123420406080100 COMMON EMITTERTa=25 = CTa=25 CTa=-55 CCOMMON EMITTERV =1 VCEFEC103010030030501003005001kCOMMON EMITTERV =1 VCETa=125 CTa=25 CTa=-55 CCE(sat)CVOLTAGE V (V)

4 COMMON 30100I /I =10C300 BTa=125 CTa=25 CTa=-55 CBE(sat)CVOLTAGE V (V)3Ta=125 CTa=-55 C30100300 COMMON EMITTERI /I =10510CE2003. 2. 254/42N3904 SRevision No : 3 CAPACITANCE C (pF) VOLTAGE V (V)CBC - V , C - VV - IBBASE CURRENT I (mA) VOLTAGE V (V) CI =1mACI =10mACCI =30mACI =100mAobCBibEB C (pF)ib V (V) CCCibob


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