3 V to 28 V Input, 8 A, 12 A microBUCK DC/DC Converter

1 SiC437, SiC438. Vishay Siliconix 3 V to 28 V Input, 8 A, 12 A. microBUCK DC/DC Converter FEATURES. Versatile - Operation from 3 V to 28 V input voltage - Adjustable output voltage down to V. - Scalable solution 8 A (SiC438), 12 A (SiC437), and 24 A (SiC431). LINKS TO ADDITIONAL RESOURCES - Output voltage tracking and sequencing with pre-bias start up Simulation Evaluation Design Tools - 1 % output voltage accuracy at -40 C to +125 C. Tool Boards Highly efficient DESCRIPTION - 97 % peak efficiency The SiC43x are synchronous buck regulators with integrated high side and low side power MOSFETs. Its - 1 A supply current at shutdown power stage is capable of supplying 12 A (SiC437) and 8 A - 50 A operating current not switching (SiC438) continuous current at up to 1 MHz switching Highly configurable frequency. This regulator produces an adjustable output voltage down to V from 3 V to 28 V input rail to - Four programmable switching frequencies available: accommodate a variety of applications, including 300 kHz, 500 kHz, 750 kHz, and 1 MHz computing, consumer electronics, telecom, and industrial.

2 - Adjustable soft start and adjustable current limit SiC437's and SiC438's architecture delivers ultrafast transient response with minimum output capacitance and - Three modes of operation: forced continuous tight ripple regulation at very light load. The device is conduction, power save (SiC43xB, SiC43xD), or internally compensated and is stable with any capacitor. No ultrasonic (SiC43xA, SiC43xC). external ESR network is required for loop stability purposes. The device also incorporates a power saving scheme that Robust and reliable significantly increases light load efficiency. - Cycle-by-cycle current limit The regulator family integrates a full protection feature set, - Output overvoltage protection including output overvoltage protection (OVP), cycle by cycle overcurrent protection (OCP) short circuit protection - Output undervoltage / short circuit protection with auto (SCP) and thermal shutdown (OTP). It also has UVLO and a retry user programmable soft start. - Power good flag and over temperature protection The SiC437 and SiC438 are available in lead (Pb)-free power enhanced MLP-44L package in 4 mm x 4 mm dimension.

3 Material categorization: for definitions of compliance please see APPLICATIONS.. 5 V, 12 V, and 24 V input rail POLs . Desktop, notebooks, server, and industrial computing . Industrial and automation . consumer electronics TYPICAL APPLICATION CIRCUIT AND PACKAGE OPTIONS. Axis Title 100 10000. 98. EN. PGOOD. INPUT 96. BOOT. VDC to 24 VDC. CBOOT 94. eff - Efficiency (%). VIN VOUT = 5 V, L = H 1000. Phase VOUT 92. 2nd line 1st line 2nd line VDD SiC43x SW 90. CIN VDRV GL. 88. MODE1 VOUT VOUT = V, L = H 100. 86. MODE2 VFB. RUP. PGND. AGND. 84. RDOWN COUT 82. 80 10. 0 1 2 3 4 5 6 7 8 9 10 11 12. IOUT - Output Current (A). Fig. 1 - Typical Application Circuit Fig. 2 - Efficiency vs. Output Current (VIN = 12 V, fsw = 500 kHz, Power Saving Mode). S20-0679-Rev. D, 27-Aug-2020 1 Document Number: 75921. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC437, SiC438.

4 Vishay Siliconix PIN CONFIGURATION. 21 MODE1. 20 MODE2. 20 MODE2. 21 MODE1. 24 PHASE. 24 PHASE. 23 BOOT. 23 BOOT. 18 VOUT. 18 VOUT. 19 EN. 19 EN. 22 VIN. 22 VIN. Pin 1 indicator 17 FB FB 17. VIN 1 16 AGND AGND 16 25 26 1 VIN. AGND VIN. VIN 2 15 VDD VDD 15 2 VIN. 14 PGOOD PGOOD 14. PGND 3 13 PGND PGND 13 27 3 PGND. PGND. PGND 4 12 VDRV VDRV 12 4 PGND. 11 GL GL 11. 28. SW 5. SW 6. SW 7. SW 8. SW 9. GL 10. GL 10. SW 9. SW 8. SW 7. SW 6. SW 5. GL. Fig. 3 - SiC43x Pin Configuration PIN DESCRIPTION. PIN NUMBER SYMBOL DESCRIPTION. 1, 2, 22, 26 VIN Input voltage 3, 4, 13, 27 PGND Power signal return ground 5 to 9 SW Switching node signal; output inductor connection point 10, 11, 28 GL Low side power MOSFET gate signal 12 VDRV Supply voltage for internal gate driver. Connect a F decoupling capacitor to PGND. 14 PGOOD Power good signal output; open drain 15 VDD Supply voltage for internal logic. Connect a 1 F decoupling capacitor to AGND. 16, 25 AGND Analog signal return ground 17 FB Output voltage feedback pin; connect to VOUT through a resistor divider network.

5 18 VOUT Output voltage sense pin 19 EN Enable pin 20 MODE2 Soft start and current limit selection; connect a resistor to VDD or AGND per table 2. 21 MODE1 Operating mode and switching frequency selection; connect a resistor to VDD or AGND per table 1. 23 BOOT Bootstrap pin; connect a capacitor to PHASE pin for HS power MOSFET gate voltage supply 24 PHASE Switching node signal for bootstrap return path ORDERING INFORMATION. OPERATING. PART MAXIMUM LIGHT LOAD. PART NUMBER VDD, VDRV JUNCTION PACKAGE. MARKING CURRENT MODE. TEMPERATURE. SiC437 AED-T1-GE3 SiC437A ultrasonic Internal SiC437 BED-T1-GE3 SiC437B Power saving 12 A. SiC437 CED-T1-GE3 SiC437C ultrasonic External SiC437 DED-T1-GE3 SiC437D Power saving -40 C to +125 C PowerPAK MLP44-24L. SiC438 AED-T1-GE3 SiC438A ultrasonic Internal SiC438 BED-T1-GE3 SiC438B Power saving 8A. SiC438 CED-T1-GE3 SiC438C ultrasonic External SiC438 DED-T1-GE3 SiC438D Power saving S20-0679-Rev. D, 27-Aug-2020 2 Document Number: 75921. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC437, SiC438. Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted). ELECTRICAL PARAMETER CONDITIONS LIMITS UNIT. VIN Reference to PGND to +30. VOUT Reference to PGND to +22. VDD / VDRV Reference to PGND to +6. SW / PHASE Reference to PGND to +30. 100 ns;. SW / PHASE (AC) -8 to +35. reference to PGND V. BOOT Reference to PGND to +6. BOOT to SW to +6. AGND to PGND to + EN Reference to AGND to +30. All other pins Reference to AGND to +6. Temperature Junction temperature TJ -40 to +150. C. Storage temperature TSTG -65 to +150. Power Dissipation Junction to ambient thermal impedance (R JA) 16. C/W. Junction to case thermal impedance (R JC) 2. Maximum power dissipation Ambient temperature = 25 C W. ESD Protection Human body model 4000. Electrostatic discharge protection V. Charged device model 1000.. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

7 These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (all voltages referenced to GND = 0 V). PARAMETER MIN. TYP. MAX. UNIT. Input voltage (VIN) (SiC43xA, SiC43xB) - 28. Input voltage (VIN) (SiC43xC, SiC43xD) 3 - 28. Logic supply voltage, gate driver supply voltage (VDD, VDRV). - 28. (SiC43xC, SiC43xD). V. Enable (EN) 0 - 28. Input voltage (VIN), external supply on VDD / VDRV 3 - 28. x VIN. Output voltage (VOUT) - and < 20 V. Temperature Recommended ambient temperature -40 to +105. C. Operating junction temperature -40 to +125. S20-0679-Rev. D, 27-Aug-2020 3 Document Number: 75921. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC437, SiC438.

8 Vishay Siliconix ELECTRICAL SPECIFICATIONS (VIN = 12 V, VEN = 5 V, TJ = -40 C to +125 C, unless otherwise stated). PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT. Power Supplies VIN = 6 V to 28 V. VDD supply VDD 5 (SiC43xA, SiC43xB) V. VDD UVLO threshold, rising VDD_UVLO VDD UVLO hysteresis VDD_UVLO_HYST - 300 - mV. Maximum VDD current IDD VIN = 6 V to 28 V 3 - - mA. VIN = 6 V to 28 V. VDRV supply VDRV 5 V. (SiC43xA, SiC43xB). Maximum VDRV current IDRV VIN = 6 V to 28 V 50 - - mA. Input current IVIN Non-switching, VFB > V - 50 120. A. Shutdown current IVIN_SHDN VEN = 0 V - 3. Controller and Timing TJ = 25 C 597 600 603. Feedback voltage VFB m/V. TJ = -40 C to +125 C (1) 594 600 606. VFB input bias current IFB - 2 - nA. Minimum on-time tON_MIN. - 50 65 ns tON accuracy tON_ACCURACY -10 - 10 %. On-time range tON_RANGE 65 - 2250 ns ultrasonic version (SiC43xA, SiC43xC) 20 - 30. Minimum frequency, skip mode fSW_MIN. kHz Power save version (SiC43xB, SiC43xD) 0 - - Minimum off-time tOFF_MIN.

9 205 250 305 ns Power MOSFETs (SiC437). High side on resistance RON_HS - - VDRV = 5 V, TA = 25 C m . Low side on resistance RON_LS - - Power MOSFETs (SiC438). High side on resistance RON_HS - - VDRV = 5 V, TA = 25 C m . Low side on resistance RON_LS - - Fault Protections Over current protection . IOCL_P TJ = -10 C to +125 C -20 - 20. (inductor valley current). %. Output OVP threshold VOVP - 20 - VFB with respect to V reference Output UVP threshold VUVP - -80 - TOTP_RISING Rising temperature - 150 - Over temperature protection C. TOTP_HYST Hysteresis - 25 - Power Good VFB_RISING_VTH_OV VFB rising above V reference - 20 - Power good output threshold %. VFB_FALLING_VTH_UV VFB falling below V reference - -10 - Power good hysteresis VFB_HYST - 40 - mV. Power good on resistance RON_PGOOD - 15 . Power good delay time tDLY_PGOOD 15 25 35 s EN / MODE / ultrasonic Threshold EN logic high level VEN_H - - V. EN logic low level VEN_L - - EN pull down resistance REN - 5 - M . Switching Frequency fsw = 300 kHz - 51 55.

10 Fsw = 500 kHz 90 100 110. MODE1 (switching frequency) RMODE1 k . fsw = 750 kHz 180 200 220. fsw = 1000 kHz 450 499 550. S20-0679-Rev. D, 27-Aug-2020 4 Document Number: 75921. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC437, SiC438. Vishay Siliconix ELECTRICAL SPECIFICATIONS (VIN = 12 V, VEN = 5 V, TJ = -40 C to +125 C, unless otherwise stated). PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT. Soft Start Connect RMODE2 between 3 MODE2 and AGND. Soft start time tss ms Connect RMODE2 between 6 MODE2 and VDD. Over Current Protection - SiC437. IOCP = 18 A 450 499 550. IOCP = 14 A 180 200 220. MODE 2 (over current protection) RMODE2 k . IOCP = A 90 100 110. IOCP = A - 51 55. Over Current Protection - SiC438. IOCP = 12 A 450 499 550. IOCP = A 180 200 220. MODE 2 (over current protection) RMODE2 k . IOCP = A 90 100 110. IOCP = A - 51 55. Note (1) Guaranteed by design FUNCTIONAL BLOCK DIAGRAM.