AO3401 Rev6 Rohs-BUP007A

1 AO340130V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V)< 50m RDS(ON) (at VGS = )< 60m RDS(ON) (at VGS= )< 85m SymbolVDSThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as This device is suitable for use asa load switch or in PWM Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 SOT23 Top View Bottom View DGSGSDGDSVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR CJunction and Storage Temperature Range-55 to 150 C/WR JA7010090 CThermal CharacteristicsUnitsParameterTypVDrain-S ource 12 Gate-Source VoltageTA=25 CTA=70 CPower Dissipation BPDP ulsed Drain Current CContinuous DrainCurrentTA=25 Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient ASOT23 Top View Bottom View DGSGSDGDS Rev 6: Feb.

2 2011 1 of 5 AO3401 SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold (ON)-27A4150TJ=125 C62754760m 6085m Qg(10V)14nCQg( ) Body-Diode CurrentBMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceDYNAMIC PARAMETERSGate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=-10V, VDS=-15V, ID= Source ChargeGate Drain ChargeTotal Gate ChargeRDS(ON)Static Drain-Source On-Resistancem IS=1A,VGS=0 VVDS=-5V, ID= , ID=-2 AVGS= , ID= ID=-250 AVDS=0V, VGS= 12 VZero Gate Voltage Drain CurrentGate-Body leakage currentForward TransconductanceDiode Forward VoltageElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS ADrain-Source Breakdown VoltageOn state drain currentID=-250 A, VGS=0 VVGS=-10V, VDS=5 VVGS=-10V, ID= Transfer CapacitanceVGS=0V, VDS=-15V, f=1 MHzSWITCHING (on) (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeIF= , dI/dt=100A/ sTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-15V,RL= , RGEN=3 Turn-Off Fall TimeGate Drain ChargeBody Diode Reverse Recovery TimeIF= , dI/dt=100A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

4 Ratings are based on low frequency and duty cycles to keep initialTJ=25 The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. Rev 6: Feb. 2011 2 of 5 AO3401 TYPICAL ELECTRICAL AND THERMAL (A)-VGS(Volts)Figure 2: Transfer Characteristics (Note E)204060801000246810 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=-5 VVGS= (A)-VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= (A)-VGS(Volts)Figure 2: Transfer Characteristics (Note E)204060801000246810 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + (A)-VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= (ON)(m )-VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)25 C125 CVDS=-5 VVGS= C125 C0510152025012345-ID(A)-VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= Rev 6: Feb.

6 2011 3 of 5 AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0246810051015-VGS(Volts)Q g(nC)Figure 7: Gate-Charge Characteristics0200400600800100005101520 25 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=-15 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)TA=25 (Amps)-VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 s10ms0246810051015-VGS(Volts)Qg(nC)Figur e 7: Gate-Charge Characteristics0200400600800100005101520 25 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=-15 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)TA=25 (Amps)-VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseR JA=125 C/W Rev 6: Feb.

7 2011 4 of 5 AO3401 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VVddVgsIdVgsVdsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL-2E = 1/2 LIARARBVDSSVDCDUTVddVgsVdsVgsRLRgResisti ve Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on)VDCIgVdsDUTVDCVgsVgsQgQgsQgdCharg eGate Charge Test Circuit & Waveform-+-+-10 VVddVgsIdVgsRgDUTVDCVgsVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL-+2E = 1/2 LIARARBVDSSIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & W aveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-IVDCDUTVddVgsVdsVgsRLR gResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on) Rev 6: Feb.

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