Example: tourism industry

AO4260 Rev1 Rohs - Alpha and Omega …

AO4260 . 60V N-Channel MOSFET. General Description Product Summary The AO4260 uses trench MOSFET technology that is VDS 60V. uniquely optimized to provide the most efficient high ID (at VGS=10V) 18A. frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < . switching power losses are minimized due to an RDS(ON) (at VGS = ) < . extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested SOIC-8. D. Top View Bottom View D. D. D. D. G. G. S S. S. S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 60 V.

AO4260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 4 I D (A) VGS (Volts) Figure 2: …

Tags:

  Ao4260

Information

Domain:

Source:

Link to this page:

Please notify us if you found a problem with this document:

Other abuse

Transcription of AO4260 Rev1 Rohs - Alpha and Omega …

1 AO4260 . 60V N-Channel MOSFET. General Description Product Summary The AO4260 uses trench MOSFET technology that is VDS 60V. uniquely optimized to provide the most efficient high ID (at VGS=10V) 18A. frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < . switching power losses are minimized due to an RDS(ON) (at VGS = ) < . extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested SOIC-8. D. Top View Bottom View D. D. D. D. G. G. S S. S. S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 60 V.

2 Gate-Source Voltage VGS 20 V. Continuous Drain TA=25 C 18. ID. Current TA=70 C 14 A. Pulsed Drain Current C IDM 130. Avalanche Current C IAS 65 A. Avalanche energy L= C EAS 211 mJ. TA=25 C PD W. Power Dissipation B TA=70 C 2. Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 31 40 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 59 75 C/W. Maximum Junction-to-Lead Steady-State R JL 16 24 C/W. Rev 1: Mar. 2012 Page 1 of 6. AO4260 . Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS.

3 BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 60 V. VDS=60V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS, ID=250 A V. ID(ON) On state drain current VGS=10V, VDS=5V 130 A. VGS=10V, ID=18A m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C VGS= , ID=16A 5 m . gFS Forward Transconductance VDS=5V, ID=18A 70 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current A. DYNAMIC PARAMETERS. Ciss Input Capacitance 4940 pF. Coss Output Capacitance VGS=0V, VDS=30V, f=1 MHz 445 pF. Crss Reverse Transfer Capacitance 32 pF.

4 Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 71 100 nC. Qg( ) Total Gate Charge 31 45 nC. VGS=10V, VDS=30V, ID=18A. Qgs Gate Source Charge nC. Qgd Gate Drain Charge nC. tD(on) Turn-On DelayTime ns tr Turn-On Rise Time VGS=10V, VDS=30V, RL= , ns tD(off) Turn-Off DelayTime RGEN=3 50 ns tf Turn-Off Fall Time ns trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/ s 22 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/ s 96 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design.

5 B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedance from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C.

6 The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar. 2012 Page 2 of 6. AO4260 . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 120 100. 10V VDS=5V. 100 4V 80. 80. 60. ID (A). ID(A). 60 3V. 40 125 C. 40. 20 25 C. 20. VGS= 0 0. 0 1 2 3 4 5 1 2 3 4. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E).

7 8 2. Normalized On-Resistance 6 VGS= VGS=10V. ID=18A. ). RDS(ON) (m . 17. 4 5. VGS=10V. 2. VGS= 2. ID=16A. 1. 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175. ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 12 +02. ID=18A. 10 +01. 125 C. 40. +00. 8. ). RDS(ON) (m . 125 C. IS (A). 6. 4. 25 C. 25 C. 2 0 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 1: Mar. 2012 Page 3 of 6. AO4260 . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 6000. VDS=30V.

8 ID=18A Ciss 5000. 8. Capacitance (pF). 4000. VGS (Volts). 6. 3000. 4. 2000 Coss 2. 1000. Crss 0 0. 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000 IAR (A) Peak Avalanche Current TA=25 C TA=100 C RDS(ON) 10 s 100 limited ID (Amps). TA=150 C 100 s 1ms TA=125 C. 10 10ms TJ(Max)=150 C. TA=25 C. 10s DC. 1. 1 10 100 1000. 1 10 100 1000. VDS (Volts). s). Time in avalanche, tA ( . Figure 12: Single Pulse Avalanche capability Figure 10: Maximum Forward Biased (Note C) Safe Operating Area (Note F). 10000. TA=25 C. 1000. Power (W). 100. 10. 1. 10 1000. Pulse Width (s).

9 Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F). Rev 1: Mar. 2012 Page 4 of 6. AO4260 . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10. D=Ton/T In descending order TJ,PK=TA+ JA D= , , , , , , single pulse Z JA Normalized Transient Thermal Resistance 1 R JA=75 C/W. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 12: Normalized Maximum Transient Thermal Impedance (Note F). Rev 1: Mar. 2012 Page 5 of 6. AO4260 . Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. + Vdd Vgs VDC. Rg - 10%. Vgs Vgs t d(on) tr t d(off) tf t on toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2.

10 Vds E AR = 1/2 LIAR BVDSS. Id Vds Vgs + Vdd I AR. Vgs VDC. Rg - Id DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L Isd IF. Isd dI/dt + Vdd I RM. Vgs VDC. Vdd Ig - Vds Rev 1: Mar. 2012 Page 6 of 6.


Related search queries