Atomic Layer Deposition - iws.inha.ac.kr

1 Atomic Layer DepositionEpitaxy Laboratory .Thin Film Deposition ? INHA UNIVERSITYE pitaxy Lab. 1..2..3..4..5. Step coverage .INHA UNIVERSITYE pitaxy Lab. ( PVD : Physical Vapor Deposition )- Sputtering- PLD (Pulsed Laser Deposition )- L-MBE (Laser Molecular Beam epitaxy ) (CVD : Chemical Vapor Deposition )- MOCVD (Metal Organic Chemical Vapor Deposition - PECVD (Plasma Enhanced Chmical Vapor Deposition - ALD ( Atomic Layer Deposition )Thin Film DepositionINHA UNIVERSITYE pitaxy Ratio=AR=h/wStep Coverage Step coverage AR < OK < AR < 1 marginal AR > 1 poorThin Film DepositionINHA UNIVERSITYE pitaxy Vapor Deposition CVD ?CVD gas chamber A(g) + B(g) C(s) + D(g).))

2 INHA UNIVERSITYE pitaxy Vapor Deposition CVD 1. 2. 3. PVD 4. , 5. PVD step coverage INHA UNIVERSITYE pitaxy Layer Deposition 1973 74 , 77 ALD , 1998 ALD DRAM ALD ?INHA UNIVERSITYE pitaxy Lab. ALD CVD CVD ALD Gas pulse , purge gas . pulse . Atomic Layer Deposition II-VI, III-V , SiO2, , MaterialsINHA UNIVERSITYE pitaxy Layer Deposition ALD 1. Self-limiting reaction ..2. Adsorption Chemical adsorption : Physical adsorption : INHA UNIVERSITYE pitaxy cycleSubstrateABAB1 cycleAtomic Layer Deposition ALD INHA UNIVERSITYE pitaxy Layer DepositionSubstrateSubstrateSubstrateSub strateAX(g) supplyA BX YPurgePurgeBY(g) supplyAX(g) + BY(g) AB(s) + XY(g) ALD INHA UNIVERSITYE pitaxy Lab.

3 ALD Atomic Layer Deposition1. , .2. , 300 mm .3. (aspect ratio) step coverage .4..5..INHA UNIVERSITYE pitaxy Lab. ALD 1..2. Source gas, purge gas , . ALD ALD Si , , ALD . Atomic Layer DepositionINHA UNIVERSITYE pitaxy Layer Deposition ALD INHA UNIVERSITYE pitaxy Lab. ALD . 100 .. , .. ( 0 .)