Automotive P-Channel 60 V (D-S) 175 °C MOSFET

1 SQ7415 AEN. vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET . FEATURES. PRODUCT SUMMARY. TrenchFET Power MOSFET . VDS (V) - 60. PowerPAK Package . RDS(on) ( ) at VGS = - 10 V - Low Thermal Resistance, RthJC . RDS(on) ( ) at VGS = - V - Low mm Profile ID (A) - 16 AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested PowerPAK 1212-8 Material categorization: For definitions of S compliance please see mm S. mm 1. S. 2. S. 3. G. G. 4. D. 8. D. 7. D. 6. D. 5 D. Bottom View Marking Code: Q014 P-Channel MOSFET . ORDERING INFORMATION. Package PowerPAK 1212-8. Lead (Pb)-free and Halogen-free SQ7415 AEN-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted). PARAMETER SYMBOL LIMIT UNIT. Drain-Source Voltage VDS - 60. V.

2 Gate-Source Voltage VGS 20. TC = 25 Ca - 16. Continuous Drain Current ID. TC = 125 C - 11. Continuous Source Current (Diode Conduction)a IS - 16 A. Pulsed Drain Currentb IDM - 64. Single Pulse Avalanche Current IAS - 23. L = mH. Single Pulse Avalanche Energy EAS 26 mJ. TC = 25 C 53. Maximum Power Dissipationb PD W. TC = 125 C 17. Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175. C. Soldering Recommendations (Peak Temperature)e, f 260. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL LIMIT UNIT. Junction-to-Ambient PCB Mountc RthJA 81 C/W. Junction-to-Case (Drain) RthJC Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.

3 E. See solder profile ( ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-1891, Rev. C, 26-Aug-13 1 Document Number: 67042. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SQ7415 AEN. vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted). PARAMETER SYMBOL TEST CONDITIONS MIN.

4 TYP. MAX. UNIT. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 A - 60 - - V. Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 A - - - Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V - - 100 nA. VGS = 0 V VDS = - 60 V - - -1. Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 60 V, TJ = 125 C - - - 50 A. VGS = 0 V VDS = - 60 V, TJ = 175 C - - - 150. On-State Drain Currenta ID(on) VGS = - 10 V VDS - 5 V - 15 - - A. VGS = - 10 V ID = - A - RDS(on) VGS = - 10 V ID = - A, TJ = 125 C - - Drain-Source On-State Resistancea . VGS = - 10 V ID = - A, TJ = 175 C - - VGS = - V ID = - A, - Forward Transconductanceb gfs VDS = - 15 V, ID = - A - 13 - S. Dynamicb Input Capacitance Ciss - 1108 1385. Output Capacitance Coss VGS = 0 V VDS = - 25 V, f = 1 MHz - 132 165 pF.

5 Reverse Transfer Capacitance Crss - 84 105. Total Gate Chargec Qg - 38. Gate-Source Chargec Qgs VGS = - 10 V VDS = - 30 V, ID = - A - - nC. Gate-Drain Chargec Qgd - - Gate Resistance Rg f = 1 MHz 3 6 9 . Turn-On Delay Timec td(on) - 9 14. Rise Timec tr VDD = - 30 V, RL = 30 - 9 14. ns Turn-Off Delay Timec td(off) ID - 1 A, VGEN = - 10 V, Rg = 1 - 37 56. Fall Timec tf - 8 12. Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM - - - 64 A. Forward Voltage VSD IF = - 6 A, VGS = 0 V - - - V. Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

6 These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.. S13-1891, Rev. C, 26-Aug-13 2 Document Number: 67042. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SQ7415 AEN. vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted). 20 18. VGS = 10 V thru 5 V. 15. 16. ID - Drain Current (A). VGS = 4 V. ID - Drain Current (A). 12. 12. 9. TC = 25 C. 8. 6. 4. VGS = 3 V 3.

7 TC = 125 C TC = - 55 C. 0 0. 0 1 2 3 4 5 0 1 2 3 4 5. VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V). Output Characteristics Transfer Characteristics 20. TC = - 55 C. 16 TC = 25 C. gfs - Transconductance (S). ID - Drain Current (A). 12 TC = 125 C. TC = 25 C 8. 4. TC = 125 C TC = - 55 C. 0. 0 1 2 3 4 5 0 3 6 9 12 15. VGS - Gate-to-Source Voltage (V) ID - Drain Current (A). Transfer Characteristics Transconductance 2000. 1600. RDS(on) - On-Resistance ( ). C - Capacitance (pF). Ciss 1200. VGS = V 800. VGS = 10 V. 400. Coss Crss 0. 0 4 8 12 16 20 0 10 20 30 40 50 60. VDS - Drain-to-Source Voltage (V). ID - Drain Current (A). On-Resistance vs. Drain Current Capacitance S13-1891, Rev. C, 26-Aug-13 3 Document Number: 67042. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SQ7415 AEN. vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted). 10 ID = A. RDS(on) - On-Resistance (Normalized). 8 ID = A VGS - Gate-to-Source Voltage (V). VDS = 30 V. VGS = 10 V. 6 VGS = V. 4 2 0 0 5 10 15 20 25 30 - 50 - 25 0 25 50 75 100 125 150 175. Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C). Gate Charge On-Resistance vs. Junction Temperature 100. 10. ID = 250 A. TJ = 150 C. IS - Source Current (A). VGS(th) Variance (V). 1. ID = 5 mA. TJ = 25 C. - - - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature ( C) VSD - Source-to-Drain Voltage (V). Threshold Voltage Source Drain Diode Forward Voltage - 60.

9 ID = 1 mA. VDS - Drain-to-Source Voltage (V). - 64. RDS(on) - On-Resistance ( ). - 68. - 72. TJ = 150 C. - 76. TJ = 25 C. - 80. 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175. VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature ( C). On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature S13-1891, Rev. C, 26-Aug-13 4 Document Number: 67042. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SQ7415 AEN. vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted). 100 IDM Limited ID Limited 10. 100 s ID - Drain Current (A). 1 ms 1 10 ms 100 ms, 1 s,10 s, DC. Limited by RDS(on)*.

10 TC = 25 C BVDSS Limited Single Pulse 1 10 100. VDS - Drain-to-Source Voltage (V). * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1. Duty Cycle = Normalized Effective Transient Thermal Impedance Notes: PDM. t1. t2. t1. 1. Duty Cycle, D =. t2. 2. Per Unit Base = RthJA = 81 C/W. Single Pulse 3. TJM - TA = PDMZthJA(t). 4. Surface Mounted 10 -4 10 -3 10 -2 10 -1 1 10 100 1000. Square Wave Pulse Duration (s). Normalized Thermal Transient Impedance, Junction-to-Ambient S13-1891, Rev. C, 26-Aug-13 5 Document Number: 67042. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SQ7415 AEN. vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted).