AZ 5200-E Photoresist - MicroChemicals

1 AZ 5200-E Photoresist Data Package AZ 5200-E Photoresist Original i-line resists Various viscosity grades for a multitude of applications. Sensitive in i-line and g-line Can be developed in a variety of metal ion free and inorganic developers (with and without surfactants). High thermal stability. Can be used in a positive mode and with a special image reversal process. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5200-E Photoresist i-line Resolution at Specific Film Thickness 7. 6. Film Thickness ( m). 5. 4. AZ 5218-E. 3. AZ 5214-E. 2. AZ 5209-E. 1. ~ ~ 2. Resolution ( m). AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

2 AZ 5200-E Photoresist Spin Speed Curves 6. F ilm T h ic k n e s s , m 5. 4 AZ 5218-E. 3 AZ 5209-E. 2. 1 AZ 5214-E. 0. 0 1000 2000 3000 4000. rpm AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5200-E Photoresist DTC Swingcurve for AZ 5214-E Resist AZ 1:1 developer 65. 60. max = m 55. mJ/cm . 50 max = m min = m 45. min = m 40. Film Thickness [ m]. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5200-E Photoresist Optical Parameters Refractive Index Bleached 365nm 405nm 435nm n k Unbleached n k AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

3 AZ 5200-E Photoresist Optical Parameters Dill Parameters i-line: g-line: A = ( m-1) A= NA. B = ( m-1) B= NA. C = (cm2/mJ) C= NA. Cauchy Coefficients A B C. Bleached m m4. Unbleached m m4. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5200-E Photoresist Optical Parameters - Absorptivity 322 nm 385 nm abs 300 350 400 450 500 550 600 650. wave length, nm AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5200-E Photoresist Image Reversal Process 1. Prepare wafers ( HMDS prime) Improved Adhesion 2. Spin coat m 3. Soft bake 90-100 C/ 45-60sec hot plate Oven bake 90 C/ 30min 4.

4 Expose (g-line, i-line, broad band) Under-exposure gives lift off profile 110-120 C/ 45 sec or two step Inducing cross linking 6. Flood exposure (365-405nm/ 1-2J/cm ) Solubilization of previously unexposed resist Optimum resolution and Line-width control with 7. Develop (MIF or IN developers) more dilute developers AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist Process Conditions Dense Lines FT: m SB: 100 C/ 42 sec NIKON NA i-Line No PEB. AZ 300 MIF developer ,70 sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

5 AZ 5214E Photoresist m L/S Exposure Latitude on Si, FT = m E nominal = 84 mJ/cm , Exposure Latitude = 81%. D9813-S : Nominal 84 mJ/cm . Exp. latitude 81 %. D9721: Nominal 77 mJ/cm . Exp. latitude 87 %. Measured Linewidth [ m]. 40 50 60 70 80 90 100 110 120. Exposure Dose [mJ/cm ]. SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70 sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist m L/S Exposure Latitude on Si, FT = m 45mJ/cm 55mJ/cm 65mJ/cm 75mJ/cm . E nom = 84 mJ/cm . 80mJ/cm . = 81%. 115mJ/cm 105mJ/cm 95mJ/cm 85mJ/cm . SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

6 AZ 5214E Photoresist Linearity on Si, FT = m Focus = m Measured Linewidth [ m]. 75 mJ/cm 85 mJ/cm 95 mJ/cm . Nominal Linewidth [ m]. SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist Linearity on Si, FT = m m m m m 75 mJ/cm . m m m m m SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist Linearity on Si, FT = m m m m m 85 mJ/cm m m m m m SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C.

7 AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist Linearity on Si, FT = m m m m m 95 mJ/cm m m m m m SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist m L/S Focus Latitude on Si, FT = m Measured Linewidth [ m]. 75 mJ/cm 85 mJ/cm 95 mJ/cm . Focus [ m]. SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

8 AZ 5214E Photoresist m L/S Focus Latitude on Si, FT = m m m m m 75 mJ/cm . m m m m m SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist m L/S Focus Latitude on Si, FT = m m m m m 85 mJ/cm m m m m m SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214E Photoresist m L/S Focus Latitude on Si, FT = m m m m m 95 mJ/cm m m m m m SB: 100 C, 42 sec; PEB: None NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C.

9 AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5218-E Photoresist 3 m L/S Image Reversal Process Process conditions FT: 4 m, SB: 110 C/90 sec Exp. PE 400mJ/cm with i-Line filter, PEB: 50 C/60sec then 110 C/90sec Develop: AZ 917 MIF developer , 90sec spray @ room temperature AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214-E Photoresist Thermal Stability of Large Pad No Bake 110 C 115 C. 120 C. SB: 100 C, 42 sec; PEB: None 125 C. NIKON NA i-Line AZ 300 MIF developer ,70sec double puddle @ C. Hard Bake: 120 sec/ hot plate AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

10 AZ 5214-E Photoresist Process Conditions Dense Lines FT: m SB: 100 C/ 42 sec;. NIKON NA i-Line No PEB. AZ 1:1 developer , 60 sec Immersion @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214-E Photoresist Exposure Latitude m L/S on Si, FT = m 55mJ/cm 60mJ/cm 65mJ/cm 70mJ/cm . 75mJ/cm . SB: 100 C/ 42 sec;. NIKON NA i-Line 85mJ/cm 80mJ/cm . AZ 1:1 developer 60sec immersion @ C. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials. AZ 5214-E Photoresist Exposure Latitude m L/S on Si, FT = m E nominal = 68 mJ/cm , Exposure Latitude = 59%. D9822-S: Nominal 65 mJ/cm.