BAT54CLT1 - Dual Common Cathode Schottky …

1 Publication Order Number:BAT54 CLT1/D Semiconductor Components Industries, LLC, 2003 March, 2018 Rev. 111 BAT54 CLDual Common CathodeSchottky Barrier DiodesThese Schottky barrier diodes are designed for high speed switchingapplications, circuit protection, and voltage clamping. Extremely lowforward voltage reduces conduction loss. Miniature surface mountpackage is excellent for hand held and portable applications wherespace is Extremely Fast Switching Speed Low Forward Voltage V (Typ) @ IF = 10 mAdc S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (TJ = 125 C unless otherwise noted)RatingSymbolValueUnitReverse VoltageVR30 VForward Power Dissipation@ TA = 25 CDerate above 25 CThermal Resistance (Note 1) Junction-to-Ambient (Note 2)RqJA508311 C/WForward Current (DC)IF200 MaxmANon Repetitive Peak Forward Currenttp < 10 msecIFSM600mARepetitive Peak Forward CurrentPulse Wave = 1 sec, Duty Cycle = 66%IFRM300mAJunction TemperatureTJ 55 to +125 CStorage Temperature RangeTstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be FR 4 @ Minimum FR 4 @ x inch VOLTDUAL Common CATHODESCHOTTKY BARRIER DIODES3 CATHODE1 ANODE2 ANODEMARKING DIAGRAM For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 23 CASE 318 STYLE 95C= Device CodeM= Date CodeG= Pb Free Package15C MGG*Date Code orientation and/or position mayvary depending upon manufacturing ORDERING INFORMATIONBAT54 CLT1 GSOT 23(Pb Free)3,000 / Tape & ReelBAT54 CLT3 GSOT 23(Pb Free)10,000 / Tape & ReelSBAT54 CLT1 GSOT 23(Pb Free)3,000 / Tape & Reel123(Note: Microdot may be in either location) CHARACTERISTICS (TA = 25 C unless otherwise noted) (EACH DIODE)CharacteristicSymbolMinTypMaxUnitR everse Breakdown Voltage(IR = 10 mA)V(BR)R30 VTotal Capacitance(VR = V, f = MHz)CT Leakage(VR = 25 V)IR Voltage(IF = mA)(IF = mA)(IF = 10 mA)(IF = 30 mA)(IF = 100 mA)VF Recovery Time(IF = IR = 10 mAdc, IR(REC) = mAdc, Figure 1)trr parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

3 Productperformance may not be indicated by the Electrical Characteristics if operated under different : 1. A kW variable resistor adjusted for a Forward Current (IF) of 10 : 2. Input pulse is adjusted so IR(peak) is equal to 10 : 3. tp trr+10 V2 k820 mFDUTVR100 mF50 W OUTPUTPULSEGENERATOR50 W INPUTSAMPLINGOSCILLOSCOPE trtpT10%90%IFIRtrrTiR(REC) = 1 mAOUTPUT PULSE(IF = IR = 10 mA; measuredat iR(REC) = 1 mA)IFINPUT SIGNALF igure 1. Recovery Time Equivalent Test CHARACTERISTICSCT, TOTAL CAPACITANCE (pF) , FORWARD VOLTAGE (VOLTS) C100VR, REVERSE VOLTAGE (VOLTS) , REVERSE VOLTAGE (VOLTS)124205101530 Figure 2. Forward VoltageFigure 3. Leakage CurrentFigure 4. Total Capacitance 40 C25 CTA = 150 CTA = 125 CTA = 85 CTA = 25 55 C150 C125 C10010003025206810IR, REVERSE CURRENT (mA)IF, FORWARD CURRENT (mA) DIMENSIONSSOT 23 (TO 236)CASE 318 08 ISSUE ASDA1312 NOTES:1.

4 DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINT*VIEW VIEW 100 10T T3 XTOP VIEWSIDE VIEWEND : *For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, 9:PIN 1. ANODE2. ANODE3. CATHODEON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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