BC546DB - Amplifier Transistors, NPN Silicon

1 DATA Semiconductor Components Industries, LLC, 2012 August, 2021 Rev. 81 Publication Order Number:BC546/DAmplifier TransistorsNPN SiliconBC546B, BC547A, B, C, bc548b , CFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector - Emitter VoltageBC546BC547BC548 VCEO654530 VdcCollector - Base VoltageBC546BC547BC548 VCBO805030 VdcEmitter - Base Current ContinuousIC100mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.*For additional information on our Pb Free strategy and soldering details, pleasedownload the onsemi Soldering and Mounting Techniques Reference Manual, detailed ordering and shipping information in the packagedimensions section on page 5 of this data INFORMATION12312 BENT LEADTAPE & REELSTRAIGHT LEAD3TO 92 CASE 29 STYLE 17 MARKING DIAGRAMBC54xyAYWWGGx= 6, 7, or 8y= A, B or CA= Assembly LocationY= YearWW = Work WeekG= Pb Free Package(Note.)

2 Microdot may be in either location) bc546b , BC547A, B, C, bc548b , CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSC ollector Emitter Breakdown Voltage(IC = mA, IB = 0)BC546BC547BC548V(BR)CEO654530 VCollector Base Breakdown Voltage(IC = 100 mAdc)BC546BC547BC548V(BR)CBO805030 VEmitter Base Breakdown Voltage(IE = 10 mA, IC = 0)BC546BC547BC548V(BR) VCollector Cutoff Current(VCE = 70 V, VBE = 0)BC546(VCE = 50 V, VBE = 0)BC547(VCE = 35 V, VBE = 0)BC548(VCE = 30 V, TA = 125 C)BC546/547/548 ICES CHARACTERISTICSDC Current Gain(IC = 10 mA, VCE = V)BC547 ABC546B/547B/548 BBC548C(IC = mA, VCE = V)BC546BC547BC548BC547 ABC546B/547B/548 BBC547C/BC548C(IC = 100 mA, VCE = V)BC547A/548 ABC546B/547B/548 BBC548 ChFE 110110110110200420 90150270 180290520120180300 450800800220450800 Collector Emitter Saturation Voltage(IC = 10 mA, IB = mA)(IC = 100 mA, IB = mA)(IC = 10 mA, IB = See Note 1)VCE(sat) Emitter Saturation Voltage(IC = 10 mA, IB = mA)VBE(sat) VBase Emitter On Voltage(IC = mA, VCE = V)(IC = 10 mA, VCE = V)VBE(on) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 10 mA, VCE = V, f = 100 MHz)BC546BC547BC548fT150150150300300300 MHzOutput Capacitance(VCB = 10 V, IC = 0, f = MHz)Cobo Capacitance(VEB = V, IC = 0, f = MHz)Cibo 10 pFSmall Signal Current Gain(IC = mA, VCE = V, f = kHz)BC546BC547/548BC547 ABC546B/547B/548 BBC547C/548 Chfe125125125240450 220330600500900260500900 Noise Figure (IC = mA, VCE = V, RS = 2 kW, f = kHz, Df = 200 Hz)

3 BC546BC547BC548NF IB is value for which IC = 11 mA at VCE = , BC547A, B, C, bc548b , 1. Normalized DC Current GainIC, COLLECTOR CURRENT (mAdc) 2. Saturation and On VoltagesIC, COLLECTOR CURRENT (mAdc) 3. Collector Saturation RegionIB, BASE CURRENT (mA)Figure 4. Base Emitter Temperature CoefficientIC, COLLECTOR CURRENT (mA) , NORMALIZED DC CURRENT GAINV, VOLTAGE (VOLTS)VCE, COLLECTOR-EMITTER VOLTAGE (V)VB, TEMPERATURE COEFFICIENT (mV/ C) = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 VVCE = 10 VTA = 25 C-55 C to +125 CTA = 25 CIC = 50 mAIC = 100 mAIC = 200 mAIC =20 mAIC =10 5. CapacitancesVR, REVERSE VOLTAGE (VOLTS)10 Figure 6. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mAdc) = 10 VTA = 25 CC, CAPACITANCE (pF)f , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) = 25 CCobCibBC546B, BC547A, B, C, bc548b , 7. DC Current GainIC, COLLECTOR CURRENT (mA)Figure 8. On VoltageIC, COLLECTOR CURRENT (mA) = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = VFigure 9.

4 Collector Saturation RegionIB, BASE CURRENT (mA)Figure 10. Base Emitter Temperature CoefficientIC, COLLECTOR CURRENT (mA) , COLLECTOR-EMITTER VOLTAGE (VOLTS)VB, TEMPERATURE COEFFICIENT (mV/ C) = 25 C200 mA50 mAIC =10 mAhFE, DC CURRENT GAIN (NORMALIZED)V, VOLTAGE (VOLTS)VCE = 5 VTA = 25 mA20 C to 125 CqVB for VBEF igure 11. CapacitanceVR, REVERSE VOLTAGE (VOLTS)40 Figure 12. Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mA) = 5 VTA = 25 CC, CAPACITANCE (pF)f , CURRENT-GAIN - BANDWIDTH = 25 CCobCibBC546B, BC547A, B, C, bc548b , INFORMATIOND evicePackageShipping BC546 BTO 925000 Units / BulkBC546 BGTO 92(Pb Free)5000 Units / BulkBC546 BRL1TO 922000 / Tape & ReelBC546 BRL1 GTO 92(Pb Free)2000 / Tape & ReelBC546 BZL1 GTO 92(Pb Free)2000 / Ammo BoxBC547 ARLTO 922000 / Tape & ReelBC547 ARLGTO 92(Pb Free)2000 / Tape & ReelBC547 AZL1 GTO 92(Pb Free)2000 / Ammo BoxBC547 BGTO 92(Pb Free)5000 Units / BulkBC547 BRL1 GTO 92(Pb Free)2000 / Tape & ReelBC547 BZL1 GTO 92(Pb Free)2000 / Ammo BoxBC547 CGTO 92(Pb Free)5000 Units / BulkBC547 CZL1 GTO 92(Pb Free)2000 / Ammo BoxBC548 BGTO 92(Pb Free)5000 Units / BulkBC548 BRL1 GTO 92(Pb Free)2000 / Tape & ReelBC548 BZL1 GTO 92(Pb Free)2000 / Ammo BoxBC548 CGTO 92(Pb Free)5000 Units / BulkBC548 CZL1 GTO 92(Pb Free)

5 2000 / Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLES ON PAGE 2 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1:112312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3 NOTES:1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKMECHANICAL CASE OUTLINEPACKAGE Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository.

6 Printed versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 3TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLE 1:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 6:PIN 1. GATE2. SOURCE & SUBSTRATE3. DRAINSTYLE 11:PIN 1. ANODE2. CATHODE & ANODE3. CATHODESTYLE 16:PIN 1. ANODE2. GATE3. CATHODESTYLE 21:PIN 1. COLLECTOR2. EMITTER3. BASESTYLE 26:PIN 1. VCC2. GROUND 23. OUTPUTSTYLE 31:PIN 1. GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. SOURCE2. DRAIN3. GATESTYLE 12:PIN 1. MAIN TERMINAL 12. GATE3. MAIN TERMINAL 2 STYLE 17:PIN 1. COLLECTOR2. BASE3. EMITTERSTYLE 22:PIN 1. SOURCE2. GATE3. DRAINSTYLE 27:PIN 1. MT2. SUBSTRATE3. MTSTYLE 32:PIN 1. BASE2. COLLECTOR3. EMITTERSTYLE 3:PIN 1. ANODE2. ANODE3. CATHODESTYLE 8:PIN 1. DRAIN2. GATE3.

7 SOURCE & SUBSTRATESTYLE 13:PIN 1. ANODE 12. GATE3. CATHODE 2 STYLE 18:PIN 1. ANODE2. CATHODE3. NOT CONNECTEDSTYLE 23:PIN 1. GATE2. SOURCE3. DRAINSTYLE 28:PIN 1. CATHODE2. ANODE3. GATESTYLE 33:PIN 1. RETURN2. INPUT3. OUTPUTSTYLE 4:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 9:PIN 1. BASE 12. EMITTER3. BASE 2 STYLE 14:PIN 1. EMITTER2. COLLECTOR3. BASESTYLE 19:PIN 1. GATE2. ANODE3. CATHODESTYLE 24:PIN 1. EMITTER2. COLLECTOR/ANODE3. CATHODESTYLE 29:PIN 1. NOT CONNECTED2. ANODE3. CATHODESTYLE 34:PIN 1. INPUT2. GROUND3. LOGICSTYLE 5:PIN 1. DRAIN2. SOURCE3. GATESTYLE 10:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. ANODE 12. CATHODE3. ANODE 2 STYLE 20:PIN 1. NOT CONNECTED2. CATHODE3. ANODESTYLE 25:PIN 1. MT 12. GATE3. MT 2 STYLE 30:PIN 1. DRAIN2. GATE3. SOURCESTYLE 35:PIN 1.

8 GATE2. COLLECTOR3. Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in 2 OF 3 DOCUMENT NUMBER:98 ASB42022 BPAGE 3 OF 3 ISSUEREVISIONDATEAMADDED BENT LEAD TAPE & REEL VERSION. REQ. BY J. MAR 2007 Semiconductor Components Industries, LLC, 2007 March, 2007 Rev. 11 AMCase Outline Number:29ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

9 Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

10 SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliatesand/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual listing of onsemi s product/patent coverage may be accessed at onsemi reserves the right to make changes at any time to anyproducts or information herein, without notice. The information herein is provided as is and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.