BCP53 Series PNP Silicon Epitaxial Transistors

1 Semiconductor Components Industries, LLC, 2015 June, 2018 Rev. 131 Publication Order Number:BCP53T1/DBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT 223 packagewhich is designed for medium power surface mount applications. High Current NPN Complement is BCP56 The SOT 223 Package can be soldered using wave or formed leads absorb thermal stress during soldering, eliminatingthe possibility of damage to the die Device Marking:BCP53T1G = AHBCP53 10T1G = AH 10 BCP53 16T1G = AH 16 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements.

2 AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (TC = 25 C unless otherwise noted)RatingSymbolValueUnitCollector Emitter VoltageVCEO 80 VdcCollector Base VoltageVCBO 100 VdcEmitter Base VoltageVEBO Power Dissipation@ TA = 25 C (Note 1)Derate above 25 COperating and StorageTemperature RangeTJ, Tstg 65 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be Device mounted on a glass epoxy printed circuit board in.

3 X in.; mounting pad for the collector lead min. sq. CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to Ambient(Surface Mounted) C/WLead Temperature for Soldering, from caseTime in Solder BathTL26010 CsDevicePackageShipping ORDERING INFORMATIONSOT 223 CASE 318 ESTYLE 1 MEDIUM POWER HIGH CURRENT SURFACE MOUNTPNP TRANSISTORSMARKING DIAGRAMBCP53T1 GSOT 223(Pb Free)1000/Tape & Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 16T1 GSOT 223(Pb Free)1000/Tape & ReelBCP53 10T1 GSOT 223(Pb Free)1000/Tape & ReelBCP53 16T3 GSOT 223(Pb Free)

4 4000/Tape & Reel1A= Assembly LocationY= YearW= Work WeekXXXXX = Specific Device CodeG= Pb Free PackageAYWXXXXXGG(Note: Microdot may be in either location)SBCP53 16T1 GSOT 223(Pb Free)1000/Tape & ReelSBCP53 10T1 GSOT 223(Pb Free)1000/Tape & ReelSBCP53 10T1 GSOT 223(Pb Free)1000/Tape & Reel1 BASEEMITTER 3 COLLECTOR 2, 41243 NSVBCP53 16T3G SOT 223(Pb Free)4000/Tape & ReelBCP53 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicsSymbolMinTypMaxUnit OFF CHARACTERISTICSC ollector Base Breakdown Voltage(IC = 100 mAdc, IE = 0)V(BR)CBO 100 VdcCollector Emitter Breakdown Voltage(IC = mAdc, IB = 0)V(BR)CEO 80 VdcCollector Emitter Breakdown Voltage(IC = 100 mAdc, RBE = kW)V(BR)CER 100 VdcEmitter Base Breakdown Voltage(IE = 10 mAdc, IC = 0)

5 V(BR)EBO VdcCollector Base Cutoff Current(VCB = 30 Vdc, IE = 0)ICBO 100nAdcEmitter Base Cutoff Current(VEB = Vdc, IC = 0)IEBO 100nAdcON CHARACTERISTICSDC Current Gain(IC = mAdc, VCE = Vdc)All Part Types(IC = 150 mAdc, VCE = Vdc) BCP53 , SBCP53 BCP53 10, SBCP53 10 BCP53 16, SBCP53 16, NSVBCP53 16(IC = 500 mAdc, VCE = Vdc)All Part TypeshFE25406310025 250160250 Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter On Voltage (IC = 500 mAdc, VCE = Vdc)VBE(on) CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 10 mAdc, VCE = Vdc, f = 35 MHz)fT 50 MHzProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

6 Productperformance may not be indicated by the Electrical Characteristics if operated under different CHARACTERISTICSF igure 1. Collector Emitter Saturation Voltagevs. Collector CurrentFigure 2. DC Current Gain vs. CollectorCurrent ( BCP53 )IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 3. DC Current Gain vs. CollectorCurrent ( BCP53 10)Figure 4. DC Current Gain vs. CollectorCurrent ( BCP53 16)IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)Figure 5. BCP53 , 10 Base Emitter SaturationVoltage vs. Collector CurrentFigure 6. BCP53 16 Base Emitter SaturationVoltage vs. Collector CurrentIC, COLLECTOR CURRENT (A)Vce(sat), COLLECTOR EMITTER SAT-URATION VOLTAGE (V)hFE, DC CURRENT GAINhFE, DC CURRENT GAINhFE, DC CURRENT GAINVbe(sat), BASE EMITTER SATURA-TION VOLTAGE (V) = 10 BCP53 , 10, 16+150 C+25 C 55 C, 5 V150 C, 2 V25 C, 5 V25 C, 2 V 55 C, 5 V 55 C, 2 C, 5 V150 C, 2 V25 C, 5 V25 C, 2 V 55 C, 5 V 55 C, 2 C, 5 V150 C, 2 V25 C, 5 V25 C, 2 V 55 C, 5 V 55 C, 2 = 10 BCP53 , 10+150 C+25 C 55 CIC, COLLECTOR CURRENT (A)Vbe(sat), BASE EMITTER SATURA-TION VOLTAGE (V) = 10 BCP53 16+150 C+25 C 55 CBCP53 CHARACTERISTICSF igure 7.

7 BCP53 , 10 Base Emitter Turn OnVoltage vs. Collector Current VBE(on)Figure 8. BCP53 16 Base Emitter Turn OnVoltage vs. Collector CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) 9. BCP53 , 10, 16 Saturation RegionFigure 10. Input CapacitanceIb, BASE CURRENT (A)VOLTAGE (V) 11. Output CapacitanceFigure 12. Standard Operating AreaVOLTAGE (V)Vce, COLLECTOR EMITTER VOLTAGE (V) (on), BASE EMITTER TURN ONVOLTAGE (V)Vbe(sat), BASE EMITTER SATURA-TION VOLTAGE (V)Vce, COLLECTOR EMITTER VOLTAGE (V)CAPACITANCE (pF)CAPACITANCE (pF)Ic, COLLECTOR CURRENT (A) = 2 VBCP53, 10+150 C+25 C 55 CVce = 2 VBCP53 16+150 C+25 C 55 , 10, 16IC = 100 mAIC = 500 mAIC = AIC = ABCP53 10 BCP53 BCP53 16121618 BCP53 10 BCP53 BCP53 16 SINGLE PULSE TEST AT Tamb = 25 CCONTINUOUS THERMAL LIMIT100 ms10 ms1 ms1 DIMENSIONSSOT 223 (TO 261)CASE 318E 04 ISSUE NSTYLE 1:PIN 1.

8 BASE2. COLLECTOR3. EMITTER4. (0003)AL1 CNOTES: AND TOLERANCING PER ASME ,1994. DIMENSION: mminches SCALE 6 FOOTPRINT* e10 10 0 10 *For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patentcoverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental is responsible for its products and applications using ON Semiconductor products.

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