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BD135 BD137 BD139 NPN SILICON TRANSISTOR

BD135 . BD137 / BD139 . NPN SILICON TRANSISTOR . SGS- thomson PREFERRED SALESTYPES. DESCRIPTION. The BD135 , BD137 and BD139 are SILICON epitaxial planar NPN transistors in Jedec SOT-32. plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1. BD138 and BD140. 2. 3. SOT-32. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM RATINGS. Symb ol Parameter Valu e Unit BD135 BD137 BD139 . V CBO Collector-Base Voltage (I E = 0) 45 60 80 V. V CEO Collector-Emitter Voltage (IB = 0) 45 60 80 V. V EBO Emitter-Base Voltage (IC = 0) 5 V. IC Collector Current A. I CM Collector Peak Current 3 A. IB Base Current A. o P tot T otal Dissipation at Tc 25 C W.

Information furnishedis believed to be accurateand reliable.However,SGS-THOMSON Microelectronics assumes no responsabilityfor the consequences of use ofsuch informationnor forany infringement of patents or other rights of third parties which may results fromits use.

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Transcription of BD135 BD137 BD139 NPN SILICON TRANSISTOR

1 BD135 . BD137 / BD139 . NPN SILICON TRANSISTOR . SGS- thomson PREFERRED SALESTYPES. DESCRIPTION. The BD135 , BD137 and BD139 are SILICON epitaxial planar NPN transistors in Jedec SOT-32. plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1. BD138 and BD140. 2. 3. SOT-32. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM RATINGS. Symb ol Parameter Valu e Unit BD135 BD137 BD139 . V CBO Collector-Base Voltage (I E = 0) 45 60 80 V. V CEO Collector-Emitter Voltage (IB = 0) 45 60 80 V. V EBO Emitter-Base Voltage (IC = 0) 5 V. IC Collector Current A. I CM Collector Peak Current 3 A. IB Base Current A. o P tot T otal Dissipation at Tc 25 C W.

2 O P tot T otal Dissipation at Tamb 25 C W. o T s tg Storage T emperature -65 to 150 C. o Tj Max. Operating Junction T emperature 150 C. October 1995 1/4. BD135 / BD137 / BD139 . THERMAL DATA. o R thj -ca se Thermal Resistance Junction-case Max 10 C/W. ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified). Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit I CBO Collector Cut-off V CB = 30 V A. Current (I E = 0) V CB = 30 V TC = 125 o C 10 A. I EBO Emitter Cut- off Current V EB = 5 V 10 A. (I C = 0). V CEO(sus) Collector-Emitter I C = 30 mA. Sustaining Voltage for BD135 45 V. for BD137 60 V. for BD139 80 V. V CE(sat) Collector-Emitter I C = A IB = A V. Saturation Voltage V BE Base-Emitter Voltage I C = A VCE = 2 V 1 V.

3 H FE DC Current Gain I C = 5 mA V CE = 2 V 25. I C = A VCE = 2 V 25. I C = 150 mA VCE = 2 V 40 250. h FE h FE Groups I C = 150 mA V CE = 2 V. for BD139 group 10 63 160. Pulsed: Pulse duration = 300 s, duty cycle %. 2/4. BD135 / BD137 /B139. SOT-32 MECHANICAL DATA. mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A B b b1 C c1 D e e3 F G 3 H 0016114. 3/4. BD135 / BD137 / BD139 . Information furnished is believed to be accurate and reliable. However, SGS- thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS- thomson microelectronics .

4 Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS- thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS- thomson Microelectonics. 1995 SGS- thomson microelectronics - All Rights Reserved SGS- thomson microelectronics GROUP OF COMPANIES. Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - . 4/4.


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