BSS123 - N-Channel Logic Level Enhancement Mode Field ...

1 DATA Semiconductor Components Industries, LLC, 2003 November, 2021 Rev. 101 Publication Order Number: BSS123 /DN-Channel Logic LevelEnhancement Mode FieldEffect TransistorBSS123 General DescriptionThese N Channel Enhancement mode Field effect transistors areproduced using onsemi s proprietary, high cell density, DMOS technology. These products have been designed to minimize on stateresistance while provide rugged, reliable, and fast switchingperformance. These products are particularly suited for low voltage,low current applications such as small servo motor control, powerMOSFET gate drivers, and other switching A, 100 V RDS(on) = 6 @ VGS = 10 V RDS(on) = 10 @ VGS = V High Density Cell Design for Extremely Low RDS(on) Rugged and Reliable Compact Industry Standard SOT 23 Surface Mount Package This Device is Pb Free and Halogen FreeMARKING DIAGRAMD evicePackageShipping ORDERING INFORMATIONBSS123, BSS123 GSOT 23 3(Pb Free)

2 3000 / Tape & Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 23 3 CASE 318 08SA= Specific Device CodeM= Date Code*G= Pb Free PackageSDG(Note: Microdot may be in either location)*Date Code orientation and/or position may varydepending upon manufacturing MAXIMUM RATINGS TA = 25 C unless otherwise Source Voltage100 VVGSSGate Source Voltage 20 IDDrain Current Continuous (Note 1) Current Pulsed (Note 1) Power Dissipation (Note 1)

3 Above 25 CTJ, TSTGO perating and Storage Junction Temperature Range 55 to +150 CTLM aximum Lead Temperature for Soldering Purposes, 1/16 from Casefor 10 s300 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICS TA = 25 C unless otherwise JAThermal Resistance, Junction to Ambient (Note 1)350 C/WELECTRICAL CHARACTERISTICS TA = 25 C unless otherwise noted.

4 SymbolParameterTest ConditionsMinTypMaxUnitOFF CHARACTERISTICSBVDSSD rain Source Breakdown VoltageVGS = 0 V, ID = 250 A100 V BVDSS TJBreakdown Voltage TemperatureCoefficientID = 250 A, Referenced to25 C 97 mV/ CIDSSZero Gate Voltage Drain CurrentVDS = 100 V, VGS = 0 V 1 AVDS = 100 V, VGS = 0 V,TJ = 125 C 60 VDS = 20 V, VGS = 0 V 10nAIGSSGate Body LeakageVGS = 20 V, VDS = 0 V 50nAON CHARACTERISTICS (Note 2)VGS(th)Gate Threshold VoltageVDS = VGS, ID = 1 VGS(th) TJGate Threshold Voltage Temperature CoefficientID = 1 mA, Referenced to 25 C mV/ CRDS(on)Static Drain Source On ResistanceVGS = 10 V, ID = A VGS = V, ID = A = 10 V, ID = A,TJ = 125 C (on)

5 On State Drain CurrentVGS = 10 V, VDS = 5 AgFSForward TransconductanceVDS = 10 V, ID = SDYNAMIC CHARACTERISTICSCissInput CapacitanceVDS = 25 V, VGS = 0 V,f = MHz 73 pFCossOutput Capacitance 7 CrssReverse Transfer Capacitance RGGate ResistanceVGS = 15 mV, f = MHz CHARACTERISTICS TA = 25 C unless otherwise noted. (continued)SymbolUnitMaxTypMinTest ConditionsParameterSWITCHING CHARACTERISTICS (Note 2)td(on)Turn On Delay TimeVDD = 30 V, ID = A,VGS = 10 V, RGEN = 6 On Rise Time 918td(off)Turn Off Delay Time 1731tfTurn Off Fall Time Gate ChargeVDS = 30 V, ID = A,VGS = 10 V Source Charge QgdGate Drain Charge DRAIN SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSISM aximum Continuous Drain Source Diode Forward Current Source Diode Forward VoltageVGS = 0 V, IS = A (Note 2)

6 Reverse Recovery TimeIF = A, dif/dt = 100 A/ s 11 nsQrrDiode Reverse Recovery Charge 3 nCProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different R JA is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the soldermounting surface of the drain pins. R JA is guaranteed by design while R JA is determined by the user s board ) 350 C/W when mounted on a minimum Pulse Test: Pulse Width 300 s, Duty Cycle CHARACTERISTICSF igure 1.

7 On Region CharacteristicsFigure 2. On Resistance Variation with DrainCurrent and Gate , Drain Current (A)RDS(on), Normalized Drain Source On ResistanceVDS, Drain To Source Voltage (V)ID, Drain Current (A) = 10 VVGS = V10 CHARACTERISTICS (continued)Figure 3. On Resistance Variation with TemperatureFigure 4. On Resistance Variation withGate to Source Voltage 50 , Gate To Source Voltage (V)RDS(on), On Resistance (W)TJ, Junction Temperature (5C)RDS(on), Normalized Drain Source On 46810 Figure 5.

8 Transfer CharacteristicsFigure 6. Body Diode Forward Voltage Variationwith Source Current and , Body Diode Forward Voltage (V)IS, Reverse Drain Current (A)VGS, Gate To Source Voltage (V)ID, Drain Current (A) 7. Gate Charge , Drain To Source Voltage (V)Capacitance (pF)Qg, Gate Charge (nC)VGS, Gate Source Voltage (V)68100204060100020 40 8. Capacitance CharacteristicsID = 170 mAVGS = 10 = 25 CTA = 125 CID = = 10 VTA = 125 C25 C 55 = 125 C25 C 55 CVGS = 0 VID = A70 V50 VVDS = 30 VCissCossCrss100f = 1 MHzVGS = 0 CHARACTERISTICS (continued)Figure 9.

9 Maximum Safe Operating AreaFigure 10. Single Pulse Maximum Power , Time (s)P(pk), Peak Transient Power (W)VDS, Drain Source Voltage (V)ID, Drain Current (A) PulseR JA = 350 C/WTA = 25 C1000 Figure 11. Transient Thermal Response , Time (s)r(t), Normalized Effective TransientThermal characterization performed using the conditions described in Note thermal response will change depending on the circuit board (on) LimitVGS = 10 VSingle PulseR JA = 350 C/WTA = 25 C100 sDC1 s100 ms10 ms1 ms10 sR JA(t)= r(t) * R JAR JA = 350 C/WTJ TA = P * R JA(t)Duty Cycle, D = t1 / t2t1t2P(pk)Single = 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4.

10 1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1. DIMENSIONING AND TOLERANCING PER asme , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1. RETURN2. OUTPUT3.