BT136 series E Triacs sensitive gate - RÁDIÓVILÁG Kft.

1 Philips SemiconductorsProduct specification TriacsBT136 series E sensitive gateGENERAL DESCRIPTIONQUICK REFERENCE DATAP assivated, sensitive gate Triacs in envelope, intended for use ingeneralpurposebidirectionalBT136-600E8 00 EswitchingandphasecontrolVDRMR epetitive peak off-state600800 Vapplications, where high sensitivity isvoltagesrequired in all four (RMS)RMS on-state current44 AITSMNon-repetitive peak on-state2525 AcurrentPINNING - TO220 ABPIN CONFIGURATIONSYMBOLPINDESCRIPTION1main terminal 12main terminal 23gatetabmain terminal 2 LIMITING VALUESL imiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL peak off-state-6001800 VvoltagesIT(RMS)RMS on-state currentfull sine wave; Tmb 107 C-4 AITSMNon-repetitive peakfull sine wave; Tj = 25 C prior toon-state currentsurget = 20 ms-25At = ms-27AI2tI2t for fusingt = 10 rate of rise ofITM = 6 A; IG = A;on-state current afterdIG/dt = A/ striggeringT2+ G+-50A/ sT2+ G--50A/ sT2- G--50A/ sT2- G+-10A/ sIGMPeak gate current-2 AVGMPeak gate voltage-5 VPGMPeak gate power-5 WPG(AV)Average gate powerover any 20 ms temperature-40150 CTjOperating junction-125 CtemperatureT1T2G123tab1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state.

2 The rate of rise of current should not exceed 3 A/ 20011 Rev SemiconductorsProduct specification TriacsBT136 series E sensitive gateTHERMAL RESISTANCESSYMBOL UNITRth j-mbThermal resistancefull to mounting base half j-aThermal resistancein free air-60-K/Wjunction to ambientSTATIC CHARACTERISTICSTj = 25 C unless otherwise statedSYMBOL UNITIGTGate trigger currentVD = 12 V; IT = AT2+ G+ + G+-1125mAILL atching currentVD = 12 V; IGT = AT2+ G+ + G--1020mAT2- G+ currentVD = 12 V; IGT = voltageIT = 5 trigger voltageVD = 12 V; IT = = 400 V; IT = A; Tj = 125 leakage currentVD = VDRM(max); Tj = 125 CHARACTERISTICSTj = 25 C unless otherwise statedSYMBOL UNITdVD/dtCritical rate of rise ofVDM = 67% VDRM(max); Tj = 125 C;-50-V/ soff-state voltageexponential waveform; gate open circuittgtGate controlled turn-onITM = 6 A; VD = VDRM(max); IG = A;-2- stimedIG/dt = 5 A/ sJune 20012 Rev SemiconductorsProduct specification TriacsBT136 series E sensitive Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where = conduction Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, forsinusoidal currents, tp Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, forsinusoidal currents, f = 50 Maximum permissible rms current IT(RMS) ,versus mounting base temperature Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidalcurrents, f = 50 Hz.

3 Tmb 107 Normalised gate trigger voltageVGT(Tj)/ VGT(25 C), versus junction temperature 180120906030IT(RMS) / APtot / WTmb(max) / C1251221191161131101071041011-5005010015 0012345 Tmb / CIT(RMS) / A107 C10us100us1ms10ms100ms101001000T / sITSM / ATITSM timeITj initial = 25 C maxTdI /dt limitTT2- G+ duration / sIT(RMS) / A1101001000051015202530BT136 Number of cycles at 50 HzITSM / ATITSM timeITj initial = 25 C / CVGT(Tj)VGT(25 C)June 20013 Rev SemiconductorsProduct specification TriacsBT136 series E sensitive Normalised gate trigger currentIGT(Tj)/ IGT(25 C), versus junction temperature Normalised latching current IL(Tj)/ IL(25 C),versus junction temperature Normalised holding current IH(Tj)/ IH(25 C),versus junction temperature Typical and maximum on-state Transient thermal impedance Zth j-mb, versuspulse width Typical, critical rate of rise of off-state voltage,dVD/dt versus junction temperature / CIGT(Tj)IGT(25 C)T2+ G+T2+ G-T2- G-T2- G+ / VIT / ATj = 125 CTj = 25 CtypmaxVo = VRs = / CIL(Tj)IL(25 C) / sZth j-mb (K/W) / CIH(Tj)IH(25C)0501001501101001000Tj / CdVD/dt (V/us)June 20014 Rev SemiconductorsProduct specification TriacsBT136 series E sensitive gateMECHANICAL DATAD imensions in mmNet Mass: 2 SOT78 (TO220AB).

4 Pin 2 connected to mounting Refer to mounting instructions for SOT78 (TO220) Epoxy meets UL94 V0 at 1/8".10,3max3,72,83,03,0 maxnot tinned1,3max(2x)1232,40,64,5max5,9min15, 8max1,32,54 2,540,9 max (3x)13,5minJune 20015 Rev SemiconductorsProduct specification TriacsBT136 series E sensitive gateDEFINITIONSDATA SHEET STATUSDATA SHEETPRODUCTDEFINITIONSSTATUS2 STATUS3 Objective dataDevelopmentThis data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without noticePreliminary dataQualificationThis data sheet contains data from the preliminary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in ordere to improve the design and supply the best possibleproductProduct dataProductionThis data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply.

5 Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650 ALimiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device informationWhere application information is given, it is advisory and does not form part of the specification. Philips Electronics 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice.

6 No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property SUPPORT APPLICATIONST hese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or Please consult the most recently issued datasheet before initiating or completing a The product status of the device(s) described in this datasheet may have changed since this datasheet waspublished. The latest information is available on the Internet at URL 20016 Rev