BTS 7960 - Robot Power

1 Data Sheet, Rev. , December 2004 Never stop 7960 High Current PN Half BridgeNovalithIC43 A, 7 m + 9 m Automotive PowerTMHigh Current PN Half BridgeBTS 7960 Data Sheet1 Rev. , 2004-12-07 Product Summary ..2 Basic Features ..21 Overview .. Block Diagram .. Terms ..42 Pin Configuration .. Pin Assignment .. Pin Definitions and Functions ..53 Maximum Ratings ..64 Block Description and Characteristics .. Supply Characteristics .. Power Stages .. Power Stages - Static Characteristics .. Switching Times .. Power Stages - Dynamic Characteristics .. Protection Functions .. Overvoltage Lock Out .. Undervoltage Shut Down .. Overtemperature Protection.

2 Current Limitation .. Short Circuit Protection .. Electrical Characteristics - Protection Functions .. Control and Diagnostics .. Input Circuit .. Dead Time Generation .. Adjustable Slew Rate .. Status Flag Diagnosis With Current Sense Capability .. Truth Table .. Electrical Characteristics - Control and Diagnostics .. 205 Thermal Characteristics ..216 Application .. Application Example .. Layout Considerations ..227 Package Outlines P-TO-263-7 ..238 Package Outlines P-TO-220-7 ..249 Revision History ..25 Data Sheet2 Rev. , 2004-12-07 TypeOrdering CodePackageBTS 7960BQ67060-S6160P-TO-263-7 BTS 7960 Pon requestP-TO-220-7 High Current PN Half BridgeNovalithIC BTS 7960 BBTS 7960P Product SummaryThe BTS 7960 is a fully integrated high current halfbridge for motor drive applications.

3 It is part of theNovalithICTM family containing one p-channel highsideMOSFET and one n-channel lowside MOSFET with anintegrated driver IC in one package. Due to the p-channelhighside switch the need for a charge pump is eliminatedthus minimizing EMI. Interfacing to a microcontroller ismade easy by the integrated driver IC which featureslogic level inputs, diagnosis with current sense, slew rateadjustment, dead time generation and protection againstovertemperature, overvoltage, undervoltage,overcurrent and short circuit. The BTS 7960 provides a cost optimized solution forprotected high current PWM motor drives with very lowboard space Features Path resistance of typ.

4 16 m @25 C Low quiescent current of typ. 7 A @ 25 C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced Power dissipation in overcurrent Current limitation level of 43 A typ. Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMIBTS 7960BP-TO-263-7 BTS 7960PP-TO-220-7 TMHigh Current PN Half BridgeBTS 7960 OverviewData Sheet3 Rev. , 2004-12-07 1 OverviewThe BTS 7960 is part of the NovalithIC family containing three separate chips in onepackage: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge.

5 All threechips are mounted on one common leadframe, using the chip on chip and chip by chiptechnology. The Power switches utilize vertical MOS technologies to ensure optimum onstate resistance. Due to the p-channel highside switch the need for a charge pump iseliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by theintegrated driver IC which features logic level inputs, diagnosis with current sense, slewrate adjustment, dead time generation and protection against overtemperature,overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can becombined with other BTS 7960 to form H-bridge and 3-phase drive DiagramFigure 1 Block DiagramISSRTop-chipINHINGNDOUTLS base-chipVSHS base-chipGate DriverDead Time Rate Shut DownOV Lock OutOT Shut DownCurrent SenseBTS 7960 High Current PN Half BridgeBTS 7960 OverviewData Sheet4 Rev.

6 , 2004-12-07 figure shows the terms used in this data sheet. Figure 2 TermsIINVINOUTIINHVINHVSRISRVISIISVVS ,VSIOUT, ILVOUTVDS(HS)GNDIGND,ID(LS) IVS, -ID(HS)ININHSRISVSVSD (L S)BTS 7960 High Current PN Half BridgeBTS 7960 Pin ConfigurationData Sheet5 Rev. , 2004-12-07 2 Pin AssignmentFigure 3 Pin Assignment BTS 7960B and BTS 7960P (top view) Definitions and Functions Bold type: pin needs Power wiringPinSymbolI/OFunction1 GND -Ground2 INII nput Defines whether high- or lowside switch is activated3 INH IInhibit When set to low device goes in sleep mode 4,8 OUTOP ower output of the bridge5SR ISlew RateThe slew rate of the Power switches can be adjusted by connecting a resistor between SR and GND6 ISOC urrent Sense and Diagnosis7VS-Supply 1235674812356748 BTS 7960BP-TO-263-7 BTS 7960PP-TO-220-7 High Current PN Half BridgeBTS 7960 Maximum RatingsData Sheet6 Rev.

7 , 2004-12-07 3 Maximum RatingsNote: Maximum ratings are absolute ratings; exceeding any one of these values maycause irreversible damage to the device. Exposure to maximum rating conditionsfor extended periods of time may affect device reliability-40 C < Tj < 150 C (unless otherwise specified)PosParameterSymbolLimitsUnitTe st ConditionminmaxElectrical Maximum Input VoltageVINVINH continuous drain current ID(HS)ID(LS)-40401)1)Maximum reachable current may be smaller depending on current limitation levelATC < 85 Cswitch pulsed drain currentID(HS)-60601)ATC < 85 Ctpulse = pulsed drain currentID(LS)-60601) at SR between VS and IS pinVVS at IS pinVIS-2045 VThermal Maximum temperatureTj-40150 Storage temperatureTstg-55150 CESD ESD susceptibility HBMIN, INH, SR, ISOUT, GND, VSVESD-2-626kVaccording to EIA/JESD 22-A 114 BHigh Current PN Half BridgeBTS 7960 Block Description and CharacteristicsData Sheet7 Rev.

8 , 2004-12-07 4 Block Description and Characteristics 40 C < Tj < 150 C, 8 V < VS < 18 V, IL = 0A (unless otherwise specified) Limit ValuesUnitTest Conditionsmin. CurrentIVS(on) 23mAVINH = 5 VVIN = 0V or 5 VRSR=0 DC-modenormal operation (no fault condition) CurrentIVS(off) 715 AVINH = 0 VVIN = 0V or 5 VTj <85 C 65 AVINH = 0 VVIN = 0V or 5 VHigh Current PN Half BridgeBTS 7960 Block Description and CharacteristicsData Sheet8 Rev. , 2004-12-07 StagesThe Power stages of the BTS 7960 consist of a p-channel vertical DMOS transistor forthe high side switch and a n-channel vertical DMOS transistor for the low side switch. Allprotection and diagnostic functions are located in a separate top chip.

9 Both switches canbe operated up to 25 kHz, allowing active freewheeling and thus minimizing powerdissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on thejunction temperature Tj . The typical on state resistance characteristics are shown inFigure 4 Typical On State Resistance vs. Supply Voltage510152025481216202428 VSRON(HS)m VTj = 150 CTj = 25 CTj = -40 CHigh Side Switch510152025481216202428 VSRON(LS)m VTj = 150 CTj = 25 CTj = -40 CLow Side SwitchHigh Current PN Half BridgeBTS 7960 Block Description and CharacteristicsData Sheet9 Rev. , 2004-12-07 Stages - Static Characteristics 40 C < Tj < 150 C, 8 V < VS < 18 V (unless otherwise specified) Limit ValuesUnitTest Conditionsmin.

10 Side Switch - Static state high side resistanceRON(HS) IOUT = 9 AVS= VTj = 25 CTj = 150 current high sideIL(LKHS) 1 AVINH = 0 VVOUT = 0 VTj < 85 C 50 AVINH = 0 VVOUT = 0 VTj = 150 diode forward-voltage high side 1)1)Due to active freewheeling, diode is conducting only for a few s, depending on RSRVDS(HS) =-9 ATj = -40 CTj = 25 CTj = 150 CLow Side Switch - Static state low side resistanceRON(LS) 9141218m IOUT =-9 AVS= = 25 CTj = 150 current low sideIL(LKLS) 1 AVINH = 0 VVOUT = VSTj < 85 C 15 AVINH = 0 VVOUT = VSTj = 150 diode forward-voltage low side 1)VSD(LS) = 9 ATj = -40 CTj = 25 CTj = 150 CHigh Current PN Half BridgeBTS 7960 Block Description and CharacteristicsData Sheet10 Rev.