Chapter 1.

1 Chapter 1. Crystal Properties and Growth of semiconductors ( ) Chap. 1. Crystal Properties and Growth of semiconductors ? , , .. Chap. 1. Crystal Properties and Growth of semiconductors ? ) , , ) , !!! ) , , Chap. 1. Crystal Properties and Growth of semiconductors (a) II III IV V VI Zn Cd B Al Ga In C Si Ge N P As Sb S Se Te (b) Elemental IV compounds Binary III-V compounds Binary II-VI compounds Si Ge SiC SiGe AlP AlAs AlSb GaN GaP GaAs GaSb InP InAs InSb ZnS ZnSe ZnTe CdS CdSe CdTe Table. 1-1 (a) (b) Chap. 1. Crystal Properties and Growth of semiconductors ?

2 Si, Ge : , , Tr, , , GaN, GaP, GaAs (Binary III-V) LED GaAsP(ternary), InGaAsP(quaternary) TV ZnS (II-VI) Light detector InSb, CdSe, PbTe, HgCdTe Gunn diode GaAs, InP GaAs, AlGaAs, 3 , 4 Energy band gap . Doping , : doping Chap. 1. Crystal Properties and Growth of semiconductors (a) Crystalline solid : . (b) Amorphous solid : . (c) Polycrystalline solid : . Fig. 1-1 (a) (b) , (c) (a) . Chap. 1. Crystal Properties and Growth of semiconductors Fig. 1-2 r=3a+2b 2 (lattice) : (unit cell) : (primitive cell) : Chap.

3 1. Crystal Properties and Growth of semiconductors Fig. 1-3 . Chap. 1. Crystal Properties and Growth of semiconductors Fig. 1-4 fcc Chap. 1. Crystal Properties and Growth of semiconductors Miller index . , . ( ) . {100} : . [100] : <100> : Chap. 1. Crystal Properties and Growth of semiconductors Fig. 1-7 Chap. 1. Crystal Properties and Growth of semiconductors FCC ( , , ) FCC . ( ) Zincblende (III-V ) Fig.

4 1-8 : (a) , (b)(100) a Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors SiO2(solid)+2C Si(solid) +2CO(gas) Si(solid) +3 HCl(gas) SiHCl3(gas)+H2(gas) SiHCl3(gas)+H2(gas) Si(solid) +3 HCl(gas) Czochralski technique.. MGS EGS Metallurgical Grade Si Electronic Grade Si Fig. 1-10 Si ( ) Chap. 1. Crystal Properties and Growth of semiconductors .. Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors (wafer) (IC) (single-crystal).

5 , , (Flatness) . Slicing, lapping, polishing . Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors EGS . Si Si (dopant) . 2 .. LSdCCk kd : CS : CL : Chap. 1. Crystal Properties and Growth of semiconductors (epitaxy) epi( )+taxis( ) ( ) ( ) ( ) Chap. 1. Crystal Properties and Growth of semiconductors Homoepitaxy Heteroepitaxy.

6 (liquid-phase epitaxy; LPE) (vapor-phase epitaxy; VPE) (molecular beam epitaxy; MBE) Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors (liquid-phase epitaxy; LPE) Ex. GaAs melting point of 1238 C Mixture of GaAs With Ga metal Considerably lower melting point Si, GaAs, AlGaAs, GaP Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors SiCl4+2H2 Si+4 HCl(g) SiCl4 1150-1250 C Si epitaxial layer HCl epitaxy layer.

7 SiH4 Si+2H2 (1000 C) epitaxial layer impurities migration . Chap. 1. Crystal Properties and Growth of semiconductors MOCVD or MOVPE (CH3)3Ga+AsH3 GaAs+3CH4 (700 C) GaAs InP 2 AlGaAs 3 , 4 . III-V 1960 InP . , . Chap. 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors (molecular beam epitaxy; MBE) (physical vapor deposition; PVD) 10-9 Torr . (GaAs 600 C) (superlattice) (multi-layer) Chap. 1. Crystal Properties and Growth of semiconductors Chap.

8 1. Crystal Properties and Growth of semiconductors Chap. 1. Crystal Properties and Growth of semiconductors , , LED LED Network VCSEL (photo-diode) , HBT/HEMT Homework #1 6 Chapter 1. 1, 3, 5, 6 Chap. 1. Crystal Properties and Growth of semiconductors Q : In Sb . , InSb( ) . (100) ? ( : fcc .) Chap. 1. Crystal Properties and Growth of semiconductors .. Chap. 1. Crystal Properties and Growth of semiconductors