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Common Cathode DSEK 60 I = 2x 26 A Fast …

Common Cathode DSEK 60 IFAVM = 2x 26 A. fast Recovery VRRM = 1200 V. Epitaxial Diode (FRED) trr = 40 ns TO-247 AD. VRSM VRRM Type V V. A. C. 1200 1200 DSEK 60-12A A C A A C (TAB). A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings Features IFRMS TVJ = TVJM 50 A . International standard package IFAVM TC = 85 C; rectangular, d = 26 A JEDEC TO-247 AD. IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 375 A . Planar passivated chips IFSM TVJ = 45 C; t = 10 ms (50 Hz), sine 200 A.. Very short recovery time t = ms (60 Hz), sine 210 A . Extremely low switching losses.

© 2000 IXYS All rights reserved 1 - 2 V RSM V RRM Type V V 1200 1200 DSEK 60-12A Symbol Test Conditions Maximum Ratings I FRMS T VJ = T VJM 50 A I FAVM

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Transcription of Common Cathode DSEK 60 I = 2x 26 A Fast …

1 Common Cathode DSEK 60 IFAVM = 2x 26 A. fast Recovery VRRM = 1200 V. Epitaxial Diode (FRED) trr = 40 ns TO-247 AD. VRSM VRRM Type V V. A. C. 1200 1200 DSEK 60-12A A C A A C (TAB). A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings Features IFRMS TVJ = TVJM 50 A . International standard package IFAVM TC = 85 C; rectangular, d = 26 A JEDEC TO-247 AD. IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 375 A . Planar passivated chips IFSM TVJ = 45 C; t = 10 ms (50 Hz), sine 200 A.. Very short recovery time t = ms (60 Hz), sine 210 A . Extremely low switching losses.

2 Low IRM-values TVJ = 150 C; t = 10 ms (50 Hz), sine 185 A . Soft recovery behavior t = ms (60 Hz), sine 195 A . Epoxy meets UL 94V-0. I2t TVJ = 45 C t = 10 ms (50 Hz), sine 200 A2s t = ms (60 Hz), sine 180 A2s TVJ = 150 C; t = 10 ms (50 Hz), sine 170 A2s Applications t = ms (60 Hz), sine 160 A2s . Rectifiers in switch mode power TVJ +150 C. supplies (SMPS). TVJM 150 C. Tstg +150 C.. Uninterruptible power supplies (UPS).. Ultrasonic cleaners and welders Ptot TC = 25 C 125 W. Md Mounting torque Nm Weight 6 g Advantages . High reliability circuit operation Symbol Test Conditions Characteristic Values.

3 Low voltage peaks for reduced typ. max. protection circuits . Low noise switching IR TVJ = 25 C VR = VRRM 750 mA . Low losses TVJ = 25 C VR = VRRM 250 mA . Operating at lower temperature or TVJ = 125 C VR = VRRM 7 mA space saving by reduced cooling VF IF = 30 A; TVJ = 150 C V. TVJ = 25 C V. VT0 For power-loss calculations only V. rT TVJ = TVJM mW. RthJC K/W. RthCK K/W. RthJA 70 K/W. trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25 C 40 60 ns IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms 16 18 A. L mH; TVJ = 100 C. IFAVM rating includes reverse blocking losses at TVJM, VR = VRRM, duty cycle d = Data according to IEC 60747 and refer to a single diode unless otherwise stated.

4 036. ixys reserves the right to change limits, test conditions and dimensions 2000 ixys All rights reserved 1-2. DSEK 60, 1200 V. 70 6 50. T =100 C TVJ=100 C. A C VVJ= 540V A. 60 R VR= 540V. 5. 40. max. 50 IF=30A IRM IF=30A. 4 IF=60A. IF Qr IF=60A. TVJ=25 C 30 IF=30A. 40 IF=30A. TVJ=100 C IF=15A. 3 IF=15A. TVJ=150 C. 30. 20. 2 typ. 20 max. 10. 10 1 typ. 0 0 0. 0 1 2 3 V 4 1 10 100 A/ s 1000 0 200 400 A/ s 600. VF -diF/dt -diF/dt Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus versus voltage drop. -diF/dt. 60 1200. TVJ=100 C V ns s VR=540V.

5 50 1000. VFR. IRM max. IF=30A 40 800. Kf trr IF=60A. VFR tfr IF=30A. IF=15A 30 600. QR 20 400. tfr typ. 10 200. TVJ=125 C. IF=30A. 0 0. 0 40 80 120 C 160 0 200 400 A/ s 600 0 200 400 A/ s 600. TJ -diF/dt diF/dt Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage junction temperature. versus diF/dt. Dimensions Dim. Millimeter Inches K/W Min. Max. Min. Max. A B ZthJC C D E F G H - - J K L M M N. 1 s 10 N t Fig. 7 Transient thermal impedance junction to case. 2000 ixys All rights reserved 2-2.