DRV8313 2.5-A Triple 1/2-H Bridge Driver datasheet (Rev. D)

1 8 to 60 VDRV83133 -H Bridge DriverINENB uilt-In V10 ACopyright 2016, Texas Instruments IncorporatedProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityReferenceDesignAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand OCTOBER2012 Triple 1/2-H BridgeDriver11 Features1 Triple1/2-HBridgeDriverIC 3-PhasebrushlessDC Motors Solenoidand BrushedDC Motors HighCurrent- Low MOSFETON-Resistance Independent1/2-H-BridgeControl UncommittedComparatorCan Be UsedforCurrentLimitor OtherFunctions 8-V to 60-VOperatingSupply-VoltageRange SleepModefor StandbyOperation SmallPackageand Footprint 28-PinHTSSOP(PowerPAD Package) 36-PinVQFN2 Applications CameraGimbals HVACM otors OfficeAutomationMachines FactoryAutomationand Robotics3 DescriptionThe deviceis intendedto drivea three-phasebrushless-DCmotor,althoughit canalso be usedto drivesolenoidsor N-channelpowerMOSFET sconfiguredin a 1 dedicatedgroundterminal, uncommittedcomparatoris integratedintotheDRV8313,whichallowsfor theconstructionofcurrent-limitcircuitryo r ,chargepumpfaults,overcurrent,shortcircu its, the (1)PARTNUMBERPACKAGEBODYSIZE(NOM) DRV8313 HTSSOP(28) (36) (1) For all availablepackages,see the orderableaddendumatthe end of the OCTOBER2012 : DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporatedTableof Contents1 Pin Configurationand Applicationand Deviceand Mechanical,Packaging,and RevisionHistoryNOTE.

2 Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (November2015)to RevisionDPage Changedpin 18 of the VQFN(RHH)packagefromGNDto (January2015)to RevisionCPage Addeda new packageto the Addeda new VQFN packagefor the Correcteda numberingerroron one of the groundpins in the Pin (November2012)to RevisionBPage AddedESDR atingstable,FeatureDescriptionsection,De viceFunctionalModes,Applicationand Implementationsection,PowerSupplyRecomme ndationssection,Layoutsection,Deviceand DocumentationSupportsection,andMechanica l,Packaging,and nSLEEP35EN211 PGND12IN126 nRESET34IN312 PGND23 GND25 V3P333EN313 OUT24NC24 GND32 GND14NC5 CPL23 GND31 GND15 OUT36 CPH22 COMPN30 GND16 PGND37 VCP21 COMPP29nCOMPO17 GND8NC20 GND28nFAULT18 RSVD9VM19 VM1 CPL28 GND2 CPH27 IN13 VCP26 EN14VM25 IN25 OUT124 EN26 PGND123 IN37 PGND222 EN38 OUT221 NC9 OUT320 GND10 PGND319 nCOMPO11VM18 nFAULT12 COMPP17 nSLEEP13 COMPN16 nRESET14 GND15 OCTOBER2012 REVISEDAPRIL2016 ProductFolderLinks: DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporated5 Pin Configurationand FunctionsPWPP ackage28-PinHTSSOPWithPowerPADP ackageTop ViewNC - No internalconnectionRHHP ackage36-PinVQFNWithExposedThermalPadTop View(1)I = input,O = output,OD = open-drainoutput,PWR= power,NC = no connectPin FunctionsPINTYPE(1) VM-rated, F VM-rated, F enablesthe 1/2-Hbridgechannel; enablesthe 1/2-Hbridgechannel; enablesthe 1/2-Hbridgechannel;internalpulldownGND14 , 20, 283, 17, 20,23, 24, 30,31, 32, pulls1/2-Hbridgehigh,logiclow pulls1/2-Hbridgelow; noeffectwhenENx is low; pulls1/2-Hbridgehigh,logiclow pulls1/2-Hbridgelow; noeffectwhenENx is low; pulls1/2-Hbridgehigh,logiclow pulls1/2-Hbridgelow; noeffectwhenENx is low; , 8, 14 NCNo givenin blockdiagram(if any) ;opendrainrequiresan Pulledlogic-lowwith fault condition.

3 ,clearsfaults,and disablesthe outputs,internalpulldown4 DRV8313 SLVSBA5D OCTOBER2012 : DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporatedPin Functions(continued)PINTYPE(1) to enabledevice;logiclow to enterlow-powersleepmode;internalpulldown OUT1510 OHalf-Hbridgeoutput,connectto the loadOUT2813 OHalf-Hbridgeoutput,connectto the loadOUT3915 OHalf-Hbridgeoutput,connectto the loadPGND1611 PWRLow-sideFET GNDor to low-sidecurrent-senseresistorsPGND2712 PWRLow-sideFET GNDor to low-sidecurrent-senseresistorsPGND31016 PWRLow-sideFET GNDor to low-sidecurrent-senseresistorsRSVD 18 pin ;bypassto GNDwith a , Fceramiccapacitor;up to 16-V, F ceramiccapacitorto VMVM4, 119, motorsupplyvoltage;bypassto GNDwith two Fcapacitors(for eachpin) plus one bulk capacitorratedfor VMThermalpadPWRM ustbe connectedto ground(1)StressesbeyondthoselistedunderA bsoluteMaximumRatingsmay causepermanentdamageto the stressratingsonly,and do not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions.

4 Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay affectdevicereliability.(2)All voltagevaluesare with respectto the (unlessotherwisenoted)(1)(2)MINMAXUNITP ower-supplyvoltage(VM) (VM)02V/ sChargepumpvoltage(VCP,CPH) + 12 VChargepumpnegativeswitchingpin (CPL) (V3P3)010mAInternalregulatorvoltage(V3P3 ) voltage(nRESET,nSLEEP,nFAULT,nCOMPO,ENx, INx) (COMPP,COMPN) (nFAULT,nCOMPO)010mAContinuousphasenodep in voltage(OUTx) + (PGNDx) 600600mVPeakoutputcurrent(OUTx)Internall ylimitedAOperatingjunctiontemperatureTJ 40150 CStoragetemperatureTstg 60150 C(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.(2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (ESD)ElectrostaticdischargeHumanbodymode l(HBM),per ANSI/ESDA/JEDECJS-001(1) 3000 VChargeddevicemodel(CDM),per JEDEC specificationJESD22-C101(2) OCTOBER2012 REVISEDAPRIL2016 ProductFolderLinks: DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporated(1)Both VM pins mustbe connectedto the samesupplyvoltage.

5 (2)Powerdissipationand thermallimitsmustbe (unlessotherwisenoted)MINMAXUNITVMM otorpower-supplyvoltage(1)860 VVIND igitalpin ENx,INx0250kHzVGNDXPGND xpin voltage 500500mVIV3P3V3P3load current010(2)mATAO peratingambienttemperature 40125 C(1)For moreinformationabouttraditionaland new thermalmetrics,see theSemiconductorand IC PackageThermalMetricsapplicationreport, (1) DRV8313 UNITPWP(HTSSOP)RHH(VQFN)28 PINS36 PINSR C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/WR JC(bot)Junction-to-case(bottom) C/W6 DRV8313 SLVSBA5D OCTOBER2012 : DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporated(1)Spec ificationbasedon designand 25 C, overoperatingfree-airtemperaturerange(un lessotherwisenoted)PARAMETERTESTCONDITIO NSMINTYPMAXUNITPOWERSUPPLIESIVMVM operatingsupplycurrentVM= 24 V, fPWM< 50 kHz15mAIVMQVM sleep-modesupplycurrentVM= 24 V500800 AINTERNALREGULATOR(V3P3)V3P3V3P3voltageI OUT= 0 to 10 (nSLEEP,ENx,INx)VILI nputlow currentVIN = 0 55 AIIHI nputhigh currentVIN = V100 ARPDP ulldownresistance100k OPEN-DRAINOUTPUTS(nFAULTand nCOMPO)VOLO utputlow voltageIO= 5 leakagecurrentVO= V1 ACOMPARATOR(COMPP,COMPN,nCOMPO)VCMC ommon-modeinput-voltagerange05 VVIOI nputoffsetvoltage 77mVIIBI nputbias current 300300nAtRResponsetime100-mVstep with 10-mVoverdrive2 sH-BRIDGEFETsrDS(on)High-sideFET ON-resistanceVM= 24 V, IO= 1 A, TJ= 25 VM= 24 V, IO= 1 A, TJ= 85 C(1) ON-resistanceVM= 24 V, IO= 1 A, TJ= 25 VM= 24 V, IO= 1 A, TJ= 85 C(1)

6 22 APROTECTIONCIRCUITSVUVLOVM level35 AtOCPO vercurrentprotectiondeglitchtime5 sTTSD(1)ThermalshutdowntemperatureDie temperature150160180 CTHYS(1)ThermalshutdownhysteresisDie temperature35 CINx = 1, Resistive Load to GNDT0543-0150%80%20%80%20%tftrOUTx50%50% 50%t1t2 ENxOUTxINx = 0, Resistive Load to VM50%50%50%50%t3t4 ENxOUTxENx = 1, Resistive Load to GND50%50%50%50% OCTOBER2012 REVISEDAPRIL2016 ProductFolderLinks: DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporated(1)Spec ifiedby designand 25 C, VM= 24 V, RL= 20 PARAMETERTESTCONDITIONSMINTYPMAXUNITt1 Delaytime,ENx high to OUTxhighINx = 1130330nst2 Delaytime,ENx low to OUTxlowINx = 1275475nst3 Delaytime,ENx high to OUTxlowINx = 0100300nst4 Delaytime,ENx low to OUTxhighINx = 0200400nst5 Delaytime,INx high to OUTxhighENx = 1300500nst6 Delaytime,INx low to OUTxlowENx = 1275475nstrOutputrise time,resistiveload to GND30150nstfOutputfall time,resistiveload to GND30150nstDEAD(1)Outputdeadtime90nsFigu re1.

7 DRV8313 SwitchingCharacteristicsSupply Voltage VM (V)High-Side RDS(ON) Change (%)5101520253035404550-30-20-10010203040 506070D005 Relative to 24 V, 25qCTA = +125 CTA = +85 CTA = +25 CTA = -40 CAmbient Temperature TA (qC)High-Side RDS(ON) Change (%)-40-20020406080100120140-30-20-100102 030405060D006 Relative to 24 V, 25qCVM (V)Sleep Current IVMQ (PA)510152025303540455055604004204404604 80500520540560580600620640660D003TA = +125 CTA = +85 CTA = +25 CTA = -40 CAmbient Temperature (qC)Sleep Current IVMQ (PA)-40-20020406080100120140420440460480 500520540560580600620640D004VM (V)Supply Current IVM (mA) = +125 CTA = +85 CTA = +25 CTA = -40 CAmbient Temperature (qC)Supply Current IVM (mA) OCTOBER2012 : DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016, SupplyCurrentvs SupplyVoltageFigure3. SupplyCurrentvs Temperatureat VM = 24 VFigure4. SleepCurrentvs SupplyVoltageFigure5. SleepCurrentvs Temperatureat VM = 24 VFigure6. High-SideRDS(on)vs SupplyVoltage(Normalizedto24 V, 25 C)Figure7.

8 High-SideRDS(on)vs Temperatureat VM = 24 V(Normalizedto 25 C)Output Load (mA)V3P3 (V) = +125 CTA = +85 CTA = +25 CTA = -40 CSupply Voltage VM (V)Low-Side RDS(ON) Change (%)5101520253035404550-30-20-10010203040 506070D007 Relative to 24 V, 25qCTA = +125 CTA = +85 CTA = +25 CTA = -40 CAmbient Temperature TA (qC)Low-Side RDS(ON) Change (%)-40-20020406080100120140-30-20-100102 030405060D008 Relative to 24 V, OCTOBER2012 REVISEDAPRIL2016 ProductFolderLinks: DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporatedTypical Characteristics(continued)Figure8. Low-SideRDS(on)vs SupplyVoltage(Normalizedto24 V, 25 C)Figure9. Low-SideRDS(on)vs Temperatureat VM = 24 V(Normalizedto 25 C)Figure10. V3P3 Regulatorvs Loadat VM = 24 FCharge F10 FGNDGNDPPADVCPR egulatorsIN1EN1IN2EN2IN3 CoreLogic Control InputsVM F OUT1 VMPre-driverVCP PGND1 OCPOUT2 VMPre-driverVCP PGND2 OCPOUT3 VMPre-driverVCP PGND3 OCPRSENSE(optional)RSENSE(optional)RSENS E(optional)

9 COMPP _+COMPNO utputs COMPOFAULT VMCUVMCUEN3 RESETSLEEP ProtectionOvercurrent monitorsTemperature SensorUndervoltage monitor8 V 60 V10 VCopyright 2016, Texas Instruments Incorporated10 DRV8313 SLVSBA5D OCTOBER2012 : DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016,TexasInstrumentsIncorporated7 ,protectioncircuits,sleepmode,faultrepor ting,and a singlepowersupplysupportsa wide8-V to 60-Vrange,makingit well-suitedfor VMVMC harge F OCTOBER2012 REVISEDAPRIL2016 ProductFolderLinks: DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016, sourceterminalsof the low-sideFETsof all threehalf-H-bridgesterminateat separatepins (PGND1,PGND2,and PGND3)to allowthe use of a low-sidecurrent-senseresistoron eachoutput,if usercan alsoconnectall threetogetherto a singlelow-sidesenseresistor,or can connectthemdirectlyto groundif currentsensingis usinga low-sidesenseresistor,ensurethat the voltageon the PGND1,PGND2,or PGND3pin doesnotexceed 500 devicehas two VM pins togetherto the INx inputpinsdirectlycontrolthe state(highor low)of the OUTxoutputs;the ENxinputpinsenableordisablethe showsthe logic:Table1.

10 Outputstagesuse N-channelFETs,the devicerequiresa gate-drivevoltagehigherthanthe VMpowersupplyto enhancethe DRV8313integratesa charge-pumpcircuitthat generatesa voltageabovethe VM supplyfor this chargepumprequirestwo externalcapacitorsfor the blockdiagramand pin descriptionsfordetailson thesecapacitors(value,connection,and so forth).The chargepumpshutsdownwhennSLEEPis DRV8313 ChargePump PGND1 COMPN _+COMPP F Regulators PGND2 PGND3 RSENSE12 DRV8313 SLVSBA5D OCTOBER2012 : DRV8313 SubmitDocumentationFeedbackCopyright 2012 2016, DRV8313includesan uncommittedcomparator,whichcan find use as a current-limitcomparatoror for showsconnectionsto use the comparatorto sensecurrentfor implementinga threelow-sideFETsis sensedusinga voltageacrossthe senseresistoris comparedwitha reference,and whenthe sensedvoltageexceedsthe reference,a current-limitconditionis signaledto the V3P3internalvoltageregulatorcan be usedto set the referencevoltageof the ComparatorAs OCTOBER2012 REVISEDAPRIL2016 ProductFolderLinks.