DS21946A JP

1 2006 Microchip Technology 1TC4421A/TC4422A : 10A (typ.) : 18V : 2A (max.) :- 4,700 pF 15 ns- 47,000 pF 135 ns : 42 ns (typ.) :- 1 130 A (typ.)- 0 33 A (typ.) : (typ.) : 5V TC4420/TC4429 TC4421/TC4422 MOSFET 8 DFN MOSFET IGBT ON/OFF TC4421A/TC4422A MOSFET TC4421/TC4422 MOSFET (IGBT) TC4421A/TC4422A TC4421A/TC4422A 5V 1A 4kV TC4421A/TC4422A TTL CMOS (3V 18V) 300 mV TC4421A/TC4422A 9A MOSFET (1)

2 8 1234 VDD5678 OUTPUTGNDVDDINPUTNCGNDOUTPUTTC4421 ATC4422A5-Pin TO-220 VDDGNDINPUTGNDOUTPUTTC4421 ATC4422A VDD 1: 2: DFN TC4421A TC4422 AVDDOUTPUTGNDOUTPUTPDIP/SOIC8 DFN(2)VDDINPUTNCGND23456781TC4421 ATC4422 AVDDOUTPUTGNDOUTPUTTC4421A TC4422 AVDDOUTPUTGNDOUTPUT9A MOSFET TC4421A/TC4422 ADS21946A_JP-page 2 2006 Microchip Technology Inc. GNDVDD300 mV = 25 pF TC4422A 130 A 2006 Microchip Technology 3TC4421A/TC4422A 1 ..+20V .. (VDD + ) (GND 5V) (VIN > VDD)..50 mA : DC.

3 TA = +25 C VDD 18V MinTypMax 1 High V 0 Low VIL IIN 10 +10 A0V VIN VDD VIN 5 VDD High VOHVDD VDC Low VOL HighROH = 10 mA VDD = 18V LowROL = 10 mA VDD = 18V IPK AVDD = 18V IDC2 A10V VDD 18V TA = +25 C(TO220 DFN ) ( 2) IREV > A 2% t 300 sec ( 1) tR 2834ns 4-1 CL = 10,000 pF tF 2632ns 4-1 CL = 10,000 pF tD1 3845ns 4-1 CL = 10,000 pF tD2 4249ns 4-1 CL = 10,000 pF IS 130250 AVIN = 3V 35100 AVIN = 0V 18V 1: 2: TC4421A/TC4422 ADS21946A_JP-page 4 2006 Microchip Technology ( ) : VDD 18V.

4 MinTypMax 1 High V 0 Low VIL IIN 10 +10 A0V VIN VDD High VOHVDD VDC Low VOL HighROH = 10 mA VDD = 18V LowROL = 10 mA VDD = 18V ( 1) tR 3845ns 4-1 CL = 10,000 pF tF 3340ns 4-1 CL = 10,000 pF tD1 4-1 CL = 10,000 pF tD2 5360ns 4-1 CL = 10,000 pF IS 200500 AVIN = 3V 50150 AVIN = 0V 18V 1: : VDD 18V MinTypMax (V)TA 40 +125 C TJ +150 C TA 65 +150 C 5 TO-220qJA 71 C/W 8 6x5 DFNqJA C/W 4 8 PDIPqJA 125 C/W 8 SOICqJA 155 C/W 2006 Microchip Technology 5TC4421A/TC4422A 2 : TA = +25 C VDD 18V 2-1: 2-2: 2-3: 2-4: 2-5: 2-6.

5 0204060801001201401601804 6 8 1012141618 (V) (ns)22,000 pF10,000 pF1,000 pF100 pF050100150200250300100100010000100000 (pF) (ns)5V10V15V0204060801001201401601804 6 8 1012141618 (V) (ns)22,000 pF10,000 pF1,000 pF100 pF050100150200250300100100010000100000 (pF) (ns)5V15V10V2025303540455055-40 -25 -10520 35 50 65 80 95 110 125 ( C) (ns)tRISEtFALLVDD = 15V1E-91E-81E-74 6 8 1012141618 (V) (A sec)10-710-810-9TC4421A/TC4422 ADS21946A_JP-page 6 2006 Microchip Technology Inc.

6 : TA = +25 C VDD 18V 2-7: 2-8: 2-9: 2-10: 2-11: 2-12: 30354045505560657075804 6 8 1012141618 (V) (nS)tD2tD1 CLOAD = 10,000 pF40455055606570752345678910 (V) (ns)tD1tD2 VDD = 12V30354045505560-40 -25 -10520 35 50 65 80 95 110 125 ( C) (ns)tD2tD1 VDD = 12 VVIN = 5 VCLOAD = 10,000 pF204060801001201404 6 8 1012141618 (V)IQUIESCENT ( A) = High = Low20406080100120140160180200220-40 -25 -10 520 35 50 65 80 95 110 125 ( C)IQUIESCENT ( A) = Low = HighVDD = -25 -10 520 35 50 65 80 95 110 125 ( C) (V)VIHVILVDD = 12V 2006 Microchip Technology 7TC4421A/TC4422A.

7 TA = +25 C VDD 18V 2-13: 2-14: High 2-15: Low 2-16: (VDD = 18V) 2-17: (VDD = 12V) 2-18: (VDD = 6V) 6 8 1012141618 (V) (V) 6 8 10 12141618 (V)ROUT-HI ( )TJ = 25 CTJ = 150 CVIN = 5V (TC4422A)V= 0V (TC4421A) 6 8 101214 1618 (V)ROUT-LO ( )TJ = 25 CTJ = 150 CVIN = 0V (TC4422A)V5V (TC4421A)0204060801001201401601801001,00 010,000100,000 (pF) (mA)2 MHz1 MHz200 kHz100 kHz50 kHz10 kHzVDD = 18V0204060801001201401601802001001,00010 ,000100,000 (pF) (mA)2 MHz1 MHz200 kHz100 kHz50 kHz10 kHzVDD = 12V0204060801001201401601802002201001,00 010,000100,000 (pF) (mA)2 MHz1 MHz200 kHz100 kHz50 kHz10 kHzVDD = 6 VTC4421A/TC4422 ADS21946A_JP-page 8 2006 Microchip Technology Inc.

8 : TA = +25 C VDD 18V 2-19: (VDD = 18V) 2-20: (VDD = 12V) 2-21: (VDD = 6V)0204060801001201401601801010010001000 0 (kHz) (mA)VDD = 18V470 pF1000 pF10,000 pF22,000 pF47,000 F020406080100120140160180200101001000100 00 (kHz) (mA)470 pF1000 pF10,000 pF22,000 pF47,000 FVDD = 12V0204060801001201401601802002201010010 0010000 (kHz) (mA)470 pF1000 pF10,000 pF22,000 pF47,000 FVDD = 6V 2006 Microchip Technology 9TC4421A/TC4422A 3 3-1 3-1 (VDD) VDD MOSFET 18V VDD GND 1 F MOSFET TTL/CMOS high low 300 mV CMOS MOSFET CMOS MOSFET 6x5 DFN (PCB)

9 TO-220 VDD 8 PDIP SOIC 8 DFN 5 TO-220 11 VDD 18V221 INPUT TTL/CMOS 33 NC 442 GND 554 GND 665 OUTPUTCMOS 77 OUTPUTCMOS 883 VDD 18V PAD NC TABVDD VDD TC4421A/TC4422 ADS21946A_JP-page 10 2006 Microchip Technology Inc. 4 4-1: tD1tFtRtD2 : 100 kHz tRISE = tFALL 10 nsec tD1tFtRtD2+5V10%90%10%90%10%90%+18V0V90% 10%10%10%90%+5V+18V0V0V0V90%2675418CL = 10,000 F VDD = 18V FTC4421 ATC4422A : DFN PDIP SOIC VDDVDDI nputGNDGNDO utputOutput 2006 Microchip Technology 11TC4421A/TC4422A 5 XXXXXXXXXXXXXNNNYYWW8 PDIP (300 mil) :TC4421 APA ^ 25605145 TO-220 XXXXXXXXXXXXXXXXXXYYWWNNN :TC4421 AXXXXXXXXX0514256 VAT^^ Y ( )YY ( )WW (1 1 01 )NNN (Sn) JEDEC * JEDEC ( ).

10 3e3e8 DFN :TC4421 AVMF^05142568 SOIC (150 mil) :XXXXXXXXXXXXYYWWNNNTC4421 ASN05142563e3e3e3eXXXXXXXXXXXXXXXXYYWWNN NTC4421A/TC4422 ADS21946A_JP-page 12 2006 Microchip Technology Plastic Transistor Outline (AT) (TO-220)LH1 QEbe1eC1J1 FADa(5X) PEJECTOR PINe3 Drawing No. C04-036 Notes:Dimensions D and E1 do not include mold flash or protrusions. Mold flash orprotrusions shall not exceed .010" ( ) per equivalent: TO-220*Controlling ParameterMold Draft AngleLead WidthLead LimitsOverall HeightLead LengthOverall WidthLead *. 7 3 7 Overall Lead Hole to Bottom of Hole Between 2006 Microchip Technology 13TC4421A/TC4422A8 Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) Saw SingulatedTC4421A/TC4422 ADS21946A_JP-page 14 2006 Microchip Technology Plastic Dual In-line (PA) 300 mil (PDIP)B1BA1 ALA2p EeB cE1nD12 * MINNOMMAXMINNOMMAX n88 5101551015 5101551015* :D E1 JEDEC : MS-001 Drawing No.