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EMD5DXV6 - Dual Bias Resistor Transistors

Semiconductor Components Industries, LLC, 2014 August, 2014 Rev. 11 Publication Order Number:EMD5 DXV6/DEMD5 DXV6T5 GDual bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkThe BRT ( bias Resistor transistor ) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base emitter Resistor . These digital Transistors aredesigned to replace a single device and its external Resistor biasnetwork. The BRT eliminates these individual components byintegrating them into a single device. In the EMD5 DXV6 series, twocomplementary BRT devices are housed in the SOT 563 packagewhich is ideal for low power surface mount applications where boardspace is at a Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating These Devices are Pb Free and are RoHS CompliantQ1R1R2R2R1Q2(1)(2)(3)(4)(5)(6) 563 CASE 463A123654 marking DIAGRAMD evicePackageShipping ORDERING INFORMATION For information on tape and reel specif

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base ... MARKING DIAGRAM Device Package Shipping ...

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Transcription of EMD5DXV6 - Dual Bias Resistor Transistors

1 Semiconductor Components Industries, LLC, 2014 August, 2014 Rev. 11 Publication Order Number:EMD5 DXV6/DEMD5 DXV6T5 GDual bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkThe BRT ( bias Resistor transistor ) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base emitter Resistor . These digital Transistors aredesigned to replace a single device and its external Resistor biasnetwork. The BRT eliminates these individual components byintegrating them into a single device. In the EMD5 DXV6 series, twocomplementary BRT devices are housed in the SOT 563 packagewhich is ideal for low power surface mount applications where boardspace is at a Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating These Devices are Pb Free and are RoHS CompliantQ1R1R2R2R1Q2(1)(2)(3)(4)(5)(6) 563 CASE 463A123654 marking DIAGRAMD evicePackageShipping ORDERING INFORMATION For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 563(Pb Free)8000 / Tape &ReelU5 = Specific Device CodeM= Month CodeG= Pb Free PackageU5 MGG1(Note.)

2 Microdot may be in either location)EMD5 DXV6T5 RATINGS (TA = 25 C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted)RatingSymbolValueUnitCollector-B ase VoltageVCBO50 VdcCollector-Emitter VoltageVCEO50 VdcCollector CurrentIC100mAdcTHERMAL CHARACTERISTICSC haracteristic(One Junction Heated)SymbolMaxUnitTotal Device DissipationTA = 25 CDerate above 25 CPD357(Note 1) (Note 1)mWmW/ CThermal Resistance Junction-to-AmbientRqJA350(Note 1) C/WCharacteristic(Both Junctions Heated)SymbolMaxUnitTotal Device DissipationTA = 25 CDerate above 25 CPD500(Note 1) (Note 1)mWmW/ CThermal Resistance Junction-to-AmbientRqJA250(Note 1) C/WJunction and Storage TemperatureTJ, Tstg 55 to+150 CStresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be FR 4 @ Minimum PadEMD5 DXV6T5 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitQ 1 transistor : PNPOFF CHARACTERISTICSC ollector-Base Cutoff Current (VCB = 50 V, IE = 0)ICBO 100nAdcCollector-Emitter Cutoff Current (VCB = 50 V, IB = 0)ICEO 500nAdcEmitter-Base Cutoff Current (VEB = , IC = mA)IEBO CHARACTERISTICSC ollector-Base Breakdown Voltage (IC = 10 mA, IE = 0)V(BR)CBO50 VdcCollector-Emitter Breakdown Voltage (IC = mA, IB = 0)V(BR)CEO50 VdcDC Current Gain (VCE = 10 V, IC = mA)hFE2035 Collector Emitter Saturation Voltage (IC = 10 mA, IB = mA)VCE(SAT) Voltage (on) (VCC = V, VB = V, RL = kW)VOL Voltage (off) (VCC = V, VB = V, RL = kW) VdcInput RatioR1 transistor .

4 NPNOFF CHARACTERISTICSC ollector-Base Cutoff Current (VCB = 50 V, IE = 0)ICBO 100nAdcCollector-Emitter Cutoff Current (VCB = 50 V, IB = 0)ICEO 500nAdcEmitter-Base Cutoff Current (VEB = , IC = mA)IEBO CHARACTERISTICSC ollector-Base Breakdown Voltage (IC = 10 mA, IE = 0)V(BR)CBO50 VdcCollector-Emitter Breakdown Voltage (IC = mA, IB = 0)V(BR)CEO50 VdcDC Current Gain (VCE = 10 V, IC = mA)hFE80140 Collector Emitter Saturation Voltage (IC = 10 mA, IB = mA)VCE(SAT) Voltage (on) (VCC = V, VB = V, RL = kW)VOL Voltage (off) (VCC = V, VB = V, RL = kW) VdcInput ResistorR1334761kWResistor RatioR1 parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different 1.

5 Derating Curve250200150100500- 50050100150TA, AMBIENT TEMPERATURE ( C)PD, POWER DISSIPATION (MILLIWATTS)RqJA = 833 C/WEMD5 DXV6T5 ELECTRICAL CHARACTERISTICS EMD5 DXV6 PNP TRANSISTOR25 CIC, COLLECTOR CURRENT (mA)hFE, DC CURRENT GAINF igure 2. VCE(sat) versus ICFigure 3. DC Current GainFigure 4. Output CapacitanceFigure 5. Output Current versus Input Voltage100010IC, COLLECTOR CURRENT (mA)TA = 75 C25 C-25 C10011100075 C25 C1000 Vin, INPUT VOLTAGE (VOLTS) = -25 CVCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)TA = 75 C-25 , COLLECTOR CURRENT (mA)02050010 203040126420VR, REVERSE bias VOLTAGE (VOLTS)Cob, CAPACITANCE (pF)IC/IB = 10 VCE = 10 Vf = 1 MHzIE = 0 mATA = 25 CVO = 5 V30106010010108152535455 SERIES 110 EMD5 DXV6T5 ELECTRICAL CHARACTERISTICS EMD5 DXV6 NPN TRANSISTORVin, INPUT VOLTAGE (VOLTS)IC, COLLECTOR CURRENT (mA)hFE, DC CURRENT GAINF igure 6.

6 VCE(sat) versus , INPUT VOLTAGE (VOLTS)TA = -25 C75 C25 CFigure 7. DC Current GainFigure 8. Output 20 3040 50IC, COLLECTOR CURRENT (mA)Figure 9. Output Current versus Input Voltage100010IC, COLLECTOR CURRENT (mA)TA = 75 C25 C-25 C10010110025 C75 , REVERSE bias VOLTAGE (VOLTS)Cob, CAPACITANCE (pF)Figure 10. Input Voltage versus Output , COLLECTOR CURRENT (mA)25 C75 CVCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)VCE = 10 Vf = 1 MHzIE = 0 mATA = 25 CVO = 5 VVO = VIC/IB = 10TA = -25 CTA = -25 CEMD5 DXV6T5 DIMENSIONSSOT 563, 6 LEADCASE 463 AISSUE ( )Xb6 5 PLAC X Y NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: MILLIMETERS3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH THICKNESS.

7 MINIMUM LEAD THICKNESSIS THE MINIMUM THICKNESS OF BASE mminches SCALE 20 *For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* ORDERING INFORMATIONN. American Technical Support: 800 282 9855 Toll FreeUSA/CanadaEurope, Middle East and Africa Technical Support:Phone: 421 33 790 2910 Japan Customer Focus CenterPhone: 81 3 5817 1050 EMD5 DXV6/DLITERATURE FULFILLMENT:Literature Distribution Center for ON Box 5163, Denver, Colorado 80217 USAP hone: 303 675 2175 or 800 344 3860 Toll Free USA/CanadaFax: 303 675 2176 or 800 344 3867 Toll Free USA/CanadaEmail: Semiconductor Website: Literature: additional information, please contact your localSales RepresentativeON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

8 A listing of SCILLC s product/patent coverage may be accessedat SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representationor guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheetsand/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for eachcustomer application by customer s technical experts.

9 SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whichthe failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended orunauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part.

10 SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicablecopyright laws and is not for resale in any manner.


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